Ji Lianze, Zhao Rongzhi, Hu Chenglong, Chen Wenchao, Chen Yimin, Zhang Xuefeng
Key Laboratory for Anisotropy and Texture of Materials (MOE), School of Materials Science and Engineering, Northeastern University, Shenyang 110819, People's Republic of China.
Institute of Advanced Magnetic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310012, People's Republic of China.
J Phys Condens Matter. 2021 Aug 9;33(42). doi: 10.1088/1361-648X/abe079.
The manipulation of magnetic skyrmion has been attracting considerable attention for the fundamental physical perspective and promising applications in spintronics, ascribed to their nontrivial topology and emergent electrodynamics. However, there is a hindrance to the transmission of a skyrmion in the racetrack memory due to the skyrmion Hall effect (SHE). Antiferromagnetic (AFM) materials provide a possibility to overcome the SHE in high-velocity data writing. Herein, we systematically investigate the generation and motion of an AFM target skyrmion under the spin-polarized current. We found that the AFM target skyrmion can reach a velocity of 1088.4 m sunder the current density of 8 × 10 A m, which is lower than 1269.8 m sfor the AFM skyrmion. This slowdown can be ascribed to the deformation of AFM target skyrmion in the process of motion on a nanotrack. In addition, we observed a transformation from AFM target skyrmion to AFM skyrmion by the unzipping process through a constricted nanostructure which is mediated by the formation of AFM domain wall. Two energy barriers need to be overcome in this dynamic process, i.e. 2.93 × 10 eV from AFM target skyrmion to AFM domain wall, and 7.625 × 10 eV from AFM domain wall to AFM skyrmion. Our results provide guidance for future target skyrmion-based devices.
从基本物理角度以及在自旋电子学中的潜在应用来看,磁性斯格明子的操控一直备受关注,这归因于它们非平凡的拓扑结构和涌现的电动力学特性。然而,由于斯格明子霍尔效应(SHE),斯格明子在赛道存储器中的传输存在阻碍。反铁磁(AFM)材料为在高速数据写入中克服SHE提供了一种可能性。在此,我们系统地研究了自旋极化电流下反铁磁目标斯格明子的产生和运动。我们发现,在电流密度为8×10⁶ A/m²时,反铁磁目标斯格明子的速度可达1088.4 m/s,低于反铁磁斯格明子的1269.8 m/s。这种速度减慢可归因于反铁磁目标斯格明子在纳米轨道上运动过程中的变形。此外,我们观察到通过由反铁磁畴壁形成介导的收缩纳米结构的解压缩过程,反铁磁目标斯格明子向反铁磁斯格明子的转变。在这个动态过程中需要克服两个能量势垒,即从反铁磁目标斯格明子到反铁磁畴壁的2.93×10⁻³ eV,以及从反铁磁畴壁到反铁磁斯格明子的7.625×10⁻³ eV。我们的结果为未来基于目标斯格明子的器件提供了指导。