Suppr超能文献

用于赛道存储器的电压控制磁斯格明子运动

Voltage Controlled Magnetic Skyrmion Motion for Racetrack Memory.

作者信息

Kang Wang, Huang Yangqi, Zheng Chentian, Lv Weifeng, Lei Na, Zhang Youguang, Zhang Xichao, Zhou Yan, Zhao Weisheng

机构信息

Fert Beijing Institute, Beihang University, Beijing, China.

School of Electronic and Information Engineering, Beihang University, Beijing, China.

出版信息

Sci Rep. 2016 Mar 15;6:23164. doi: 10.1038/srep23164.

Abstract

Magnetic skyrmion, vortex-like swirling topologically stable spin configurations, is appealing as information carrier for future nanoelectronics, owing to the stability, small size and extremely low driving current density. One of the most promising applications of skyrmion is to build racetrack memory (RM). Compared to domain wall-based RM (DW-RM), skyrmion-based RM (Sky-RM) possesses quite a few benefits in terms of energy, density and speed etc. Until now, the fundamental behaviors, including nucleation/annihilation, motion and detection of skyrmion have been intensively investigated. However, one indispensable function, i.e., pinning/depinning of skyrmion still remains an open question and has to be addressed before applying skyrmion for RM. Furthermore, Current research mainly focuses on physical investigations, whereas the electrical design and evaluation are still lacking. In this work, we aim to promote the development of Sky-RM from fundamental physics to realistic electronics. First, we investigate the pinning/depinning characteristics of skyrmion in a nanotrack with the voltage-controlled magnetic anisotropy (VCMA) effect. Then, we propose a compact model and design framework of Sky-RM for electrical evaluation. This work completes the elementary memory functionality of Sky-RM and fills the technical gap between the physicists and electronic engineers, making a significant step forward for the development of Sky-RM.

摘要

磁斯格明子是一种类似涡旋的具有拓扑稳定性的自旋结构,由于其稳定性、小尺寸和极低的驱动电流密度,作为未来纳米电子学的信息载体备受关注。斯格明子最有前景的应用之一是构建赛道存储器(RM)。与基于畴壁的RM(DW-RM)相比,基于斯格明子的RM(Sky-RM)在能量、密度和速度等方面具有诸多优势。到目前为止,包括斯格明子的成核/湮灭、运动和检测在内的基本行为已经得到了深入研究。然而,一个不可或缺的功能,即斯格明子的钉扎/脱钉,仍然是一个悬而未决的问题,在将斯格明子应用于RM之前必须加以解决。此外,目前的研究主要集中在物理研究方面,而电气设计和评估仍然缺乏。在这项工作中,我们旨在推动Sky-RM从基础物理向实际电子学的发展。首先,我们利用电压控制磁各向异性(VCMA)效应研究了纳米轨道中斯格明子的钉扎/脱钉特性。然后,我们提出了一个用于电气评估的Sky-RM紧凑模型和设计框架。这项工作完成了Sky-RM的基本存储功能,填补了物理学家和电子工程师之间的技术空白,为Sky-RM的发展迈出了重要一步。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8ded/4791601/6a111d521f6e/srep23164-f2.jpg

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验