Khan Kacho Imtiyaz Ali, Sisodia Naveen, Muduli P K
Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi, 110016, India.
Sci Rep. 2021 Jun 10;11(1):12332. doi: 10.1038/s41598-021-91591-8.
We numerically investigate the ultrafast nucleation of antiferromagnetic (AFM) skyrmion using in-plane spin-polarized current and present its key advantages over out-of-plane spin-polarized current. We show that the threshold current density required for the creation of AFM skyrmion is almost an order of magnitude lower for the in-plane spin-polarized current. The nucleation time for the AFM skyrmion is found to be [Formula: see text] ps for the corresponding current density of 1-[Formula: see text]. We also demonstrate ultrafast nucleation of multiple AFM skyrmions that is possible only with in-plane spin polarized current and discuss how the current pulse width can be used to control the number of AFM skyrmions. The results show more than one order of magnitude improvement in energy consumption for ultrafast nucleation of AFM skyrmions using in-plane spin-polarized current, which is promising for applications such as logic gates, racetrack memory, and neuromorphic computing.
我们利用面内自旋极化电流对反铁磁（AFM）斯格明子的超快成核进行了数值研究，并展示了其相对于面外自旋极化电流的关键优势。我们表明，对于面内自旋极化电流，创建AFM斯格明子所需的阈值电流密度几乎低一个数量级。对于相应的1 - [公式：见原文]的电流密度，发现AFM斯格明子的成核时间为[公式：见原文]皮秒。我们还展示了仅通过面内自旋极化电流实现多个AFM斯格明子的超快成核，并讨论了如何利用电流脉冲宽度来控制AFM斯格明子的数量。结果表明，使用面内自旋极化电流实现AFM斯格明子超快成核的能量消耗提高了一个多数量级，这对于逻辑门、赛道存储器和神经形态计算等应用很有前景。
