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蓝宝石上结晶黑磷薄膜的合成。

Synthesis of Crystalline Black Phosphorus Thin Film on Sapphire.

机构信息

Department of Electrical Engineering, Yale University, New Haven, CT, 06511, USA.

Geophysical Laboratories, Carnegie Institution of Washington, Washington, DC, 20015, USA.

出版信息

Adv Mater. 2018 Feb;30(6). doi: 10.1002/adma.201703748. Epub 2018 Jan 3.

Abstract

Black phosphorus (BP) has recently attracted significant attention due to its exceptional physical properties. Currently, high-quality few-layer and thin-film BP are produced primarily by mechanical exfoliation, limiting their potential in future applications. Here, the synthesis of highly crystalline thin-film BP on 5 mm sapphire substrates by conversion from red to black phosphorus at 700 °C and 1.5 GPa is demonstrated. The synthesized ≈50 nm thick BP thin films are polycrystalline with a crystal domain size ranging from 40 to 70 µm long, as indicated by Raman mapping and infrared extinction spectroscopy. At room temperature, field-effect mobility of the synthesized BP thin film is found to be around 160 cm V s along armchair direction and reaches up to about 200 cm V s at around 90 K. Moreover, red phosphorus (RP) covered by exfoliated hexagonal boron nitride (hBN) before conversion shows atomically sharp hBN/BP interface and perfectly layered BP after the conversion. This demonstration represents a critical step toward the future realization of large scale, high-quality BP devices and circuits.

摘要

黑磷(BP)由于其独特的物理性质,最近引起了广泛关注。目前,高质量的少层和薄膜 BP 主要通过机械剥离法制备,限制了其在未来应用中的潜力。在这里,通过在 700°C 和 1.5 GPa 下将红磷转化为黑磷,在 5mm 蓝宝石衬底上成功合成了高结晶度的薄膜 BP。合成的 ≈50nm 厚的 BP 薄膜是多晶的,其晶粒尺寸范围从 40 到 70µm 长,这可以通过拉曼映射和红外消光光谱来证明。在室温下,合成的 BP 薄膜的场效应迁移率在扶手椅方向约为 160cmV s,在 90K 左右可达约 200cmV s。此外,在转化之前,覆盖有剥离的六方氮化硼(hBN)的红磷(RP)在转化后显示出原子级锋利的 hBN/BP 界面和完全分层的 BP。这一演示代表了向未来实现大规模、高质量 BP 器件和电路迈出的关键一步。

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