Niu Di, Wang Quan, Li Wei, Chen Changxi, Xu Jiankai, Jiang Lijuan, Feng Chun, Xiao Hongling, Wang Qian, Xu Xiangang, Wang Xiaoliang
Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Micromachines (Basel). 2021 Jan 26;12(2):131. doi: 10.3390/mi12020131.
The influence of the repair process on the electrical properties of the normally off p-GaN high-electron-mobility transistor (HEMT) is studied in detail in this paper. We find that the etching process will cause the two-dimensional electron gas (2DEG) and the mobility of the p-GaN HEMT to decrease. However, the repair process will gradually recover the electrical properties. We study different repair methods and different repair conditions, propose the best repair conditions, and further fabricate the p-GaN HEMTs devices. The threshold voltage of the fabricated device is 1.6 V, the maximum gate voltage is 7 V, and the on-resistance is 23 Ω·mm. The device has a good performance, which proves that the repair conditions can be successfully applied to the fabricate of the p-GaN HEMT devices.
本文详细研究了修复工艺对常关型p-GaN高电子迁移率晶体管（HEMT）电学性能的影响。我们发现蚀刻工艺会导致p-GaN HEMT的二维电子气（2DEG）和迁移率下降。然而，修复工艺会逐渐恢复电学性能。我们研究了不同的修复方法和不同的修复条件，提出了最佳修复条件，并进一步制造了p-GaN HEMT器件。所制造器件的阈值电压为1.6 V，最大栅极电压为7 V，导通电阻为23Ω·mm。该器件具有良好的性能，证明了修复条件可成功应用于p-GaN HEMT器件的制造。
