Xu Jiankai, Jiang Lijuan, Cai Ping, Feng Chun, Xiao Hongling, Wang Xiaoliang
Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Micromachines (Basel). 2024 Sep 24;15(10):1178. doi: 10.3390/mi15101178.
The GaN photoconductive semiconductor switches (PCSSs) with low leakage current and large on-state current are suitable for several applications, including fast switching and high-power electromagnetic pulse equipment. This paper demonstrates a high-power GaN lateral PCSS device. An output peak current of 142.2 A is reached with an input voltage of 10.28 kV when the GaN lateral PCSS is intrinsically triggered. In addition, the method of retaining the AlGaN/GaN heterostructure between electrodes on PCSSs is proposed, which results in increasing the output peak current of the PCSS. The damage mechanism of the PCSS caused by a high electric field and high excitation laser energy is analyzed. The obtained results show that the high heat generated by the large current leads to the decomposition of GaN, and thus, the Ga forms a metal conductive path, resulting in the failure of the device.
具有低漏电流和大导通态电流的氮化镓光电导半导体开关（PCSS）适用于多种应用，包括快速开关和高功率电磁脉冲设备。本文展示了一种高功率氮化镓横向PCSS器件。当氮化镓横向PCSS被本征触发时，在输入电压为10.28 kV的情况下，输出峰值电流达到142.2 A。此外，提出了在PCSS的电极之间保留AlGaN/GaN异质结构的方法，这导致PCSS的输出峰值电流增加。分析了高电场和高激发激光能量对PCSS造成的损伤机制。所得结果表明，大电流产生的高热量导致氮化镓分解，从而使镓形成金属导电路径，导致器件失效。
