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高功率和高频氮化铝镓/氮化镓高电子迁移率晶体管（HEMT）应用面临的挑战与机遇：综述

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review.

作者信息

Haziq Muhaimin, Falina Shaili, Manaf Asrulnizam Abd, Kawarada Hiroshi, Syamsul Mohd

机构信息

Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia.

Collaborative Microelectronic Design Excellence Center (CEDEC), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia.

出版信息

Micromachines (Basel). 2022 Dec 1;13(12):2133. doi: 10.3390/mi13122133.

DOI:10.3390/mi13122133
PMID:36557432
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9785762/
Abstract

The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET) technologies. Nevertheless, HEMT devices suffer from certain parasitic and reliability concerns that limit their performance. This paper aims to review the latest experimental evidence regarding HEMT technologies on the parasitic issues that affect aluminum gallium nitride (AlGaN)/GaN HEMTs. The first part of this review provides a brief introduction to AlGaN/GaN HEMT technologies, and the second part outlines the challenges often faced during HEMT fabrication, such as normally-on operation, self-heating effects, current collapse, peak electric field distribution, gate leakages, and high ohmic contact resistance. Finally, a number of effective approaches to enhancing the device's performance are addressed.

摘要

氮化镓高电子迁移率晶体管（GaN HEMT）器件的出现，有可能实现高功率和高频性能，超越主流的硅及其他先进半导体场效应晶体管（FET）技术。然而，HEMT器件存在一些寄生和可靠性问题，限制了它们的性能。本文旨在回顾有关HEMT技术中影响氮化铝镓（AlGaN）/GaN HEMT的寄生问题的最新实验证据。本综述的第一部分简要介绍了AlGaN/GaN HEMT技术，第二部分概述了HEMT制造过程中经常面临的挑战，如常开操作、自热效应、电流崩塌、峰值电场分布、栅极泄漏和高欧姆接触电阻。最后，探讨了一些提高器件性能的有效方法。

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