具有超结结构用于硬恢复的4H-SiC漂移阶跃恢复二极管

4H-SiC Drift Step Recovery Diode with Super Junction for Hard Recovery.

作者信息

Yan Xiaoxue, Liang Lin, Huang Xinyuan, Zhong Heqing, Yang Zewei

机构信息

State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.

出版信息

Materials (Basel). 2021 Feb 2;14(3):684. doi: 10.3390/ma14030684.

DOI:10.3390/ma14030684

PMID:33540734

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7867219/

Abstract

Silicon carbide (SiC) drift step recovery diode (DSRD) is a kind of opening-type pulsed power device with wide bandgap material. The super junction (SJ) structure is introduced in the SiC DSRD for the first time in this paper, in order to increase the hardness of the recovery process, and improve the blocking capability at the same time. The device model of the SJ SiC DSRD is established and its breakdown principle is verified. The effects of various structure parameters including the concentration, the thickness, and the width of the SJ layer on the electrical characteristics of the SJ SiC DSRD are discussed. The characteristics of the SJ SiC DSRD and the conventional SiC DSRD are compared. The results show that the breakdown voltage of the SJ SiC DSRD is 28% higher than that of the conventional SiC DSRD, and the dv/dt output by the circuit based on SJ SiC DSRD is 31% higher than that of conventional SiC DSRD. It is verified that the SJ SiC DSRD can achieve higher voltage, higher cut-off current and harder recovery characteristics than the conventional SiC DSRD, so as to output a higher dv/dt voltage on the load.

摘要

碳化硅（SiC）漂移阶跃恢复二极管（DSRD）是一种采用宽带隙材料的开放式脉冲功率器件。本文首次在SiC DSRD中引入超结（SJ）结构，以提高恢复过程的硬度，并同时提高阻断能力。建立了SJ SiC DSRD的器件模型并验证了其击穿原理。讨论了包括SJ层的浓度、厚度和宽度在内的各种结构参数对SJ SiC DSRD电学特性的影响。比较了SJ SiC DSRD和传统SiC DSRD的特性。结果表明，SJ SiC DSRD的击穿电压比传统SiC DSRD高28%，基于SJ SiC DSRD的电路输出的dv/dt比传统SiC DSRD高31%。验证了SJ SiC DSRD比传统SiC DSRD能实现更高的电压、更高的截止电流和更硬的恢复特性，从而在负载上输出更高的dv/dt电压。