Rashid Muhammad Haroon, Koel Ants, Rang Toomas, Nasir Nadeem, Mehmood Haris, Cheema Salman
Department of Textile Engineering, National Textile University, Faisalabad 37610, Pakistan.
Thomas Johann Seebeck Department of Electronics, Tallinn University of Technology, Ehitajate tee 5, 12616 Tallinn, Estonia.
Micromachines (Basel). 2021 Nov 30;12(12):1499. doi: 10.3390/mi12121499.
In the last decade, silicon carbide (SiC) has emerged as a potential material for high-frequency electronics and optoelectronics applications that may require elevated temperature processing. SiC exists in more than 200 different crystallographic forms, referred to as polytypes. Based on their remarkable physical and electrical characteristics, such as better thermal and electrical conductivities, 3C-SiC, 4H-SiC, and 6H-SiC are considered as the most distinguished polytypes of SiC. In this article, physical device simulation of a light-emitting diode (LED) based on the unique structural configuration of 4H-SiC and 6H-SiC layers has been performed which corresponds to a novel material joining technique, called diffusion welding/bonding. The proposed single quantum well (SQW) edge-emitting SiC-based LED has been simulated using a commercially available semiconductor device simulator, SILVACO TCAD. Moreover, by varying different design parameters, the current-voltage characteristics, luminous power, and power spectral density have been calculated. Our proposed LED device exhibited promising results in terms of luminous power efficiency and external quantum efficiency (EQE). The device numerically achieved a luminous efficiency of 25% and EQE of 16.43%, which is at par performance for a SQW LED. The resultant LED structure can be customized by choosing appropriate materials of varying bandgaps to extract the light emission spectrum in the desired wavelength range. It is anticipated that the physical fabrication of our proposed LED by direct bonding of SiC-SiC wafers will pave the way for the future development of efficient and cost-effective SiC-based LEDs.
在过去十年中，碳化硅（SiC）已成为高频电子和光电子应用的潜在材料，这些应用可能需要高温处理。SiC以200多种不同的晶体形式存在，称为多型体。基于其卓越的物理和电学特性，如更好的热导率和电导率，3C-SiC、4H-SiC和6H-SiC被认为是SiC最具特色的多型体。在本文中，基于4H-SiC和6H-SiC层的独特结构配置，对发光二极管（LED）进行了物理器件模拟，这对应于一种新型的材料连接技术，称为扩散焊接/键合。所提出的基于单量子阱（SQW）的边缘发射SiC基LED已使用商用半导体器件模拟器SILVACO TCAD进行了模拟。此外，通过改变不同的设计参数，计算了电流-电压特性、发光功率和功率谱密度。我们提出的LED器件在发光功率效率和外量子效率（EQE）方面表现出了令人期待的结果。该器件在数值上实现了25%的发光效率和16.43%的EQE，这与SQW LED的性能相当。通过选择具有不同带隙的合适材料，可以定制所得的LED结构，以在所需波长范围内提取发光光谱。预计通过SiC-SiC晶片的直接键合对我们提出的LED进行物理制造，将为高效且经济高效的SiC基LED的未来发展铺平道路。
