Cretu Ovidiu, Ishizuka Akimitsu, Yanagisawa Keiichi, Ishizuka Kazuo, Kimoto Koji
Electron Microscopy Group, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan.
HREM Research, Inc., 14-48 Matsukazedai, Higashimatsuyama, Saitama 355-0055, Japan.
ACS Nano. 2021 Mar 23;15(3):5316-5321. doi: 10.1021/acsnano.0c10849. Epub 2021 Feb 12.
The distribution of electric fields in hexagonal boron nitride is mapped down to the atomic level inside a scanning transmission electron microscope by using the recently introduced technique of differential phase contrast imaging. The maps are calculated and displayed in real time, along with conventional annular dark-field images, through the use of custom-developed hardware and software. An increased electric field is observed around boron monovacancies and subsequently mapped and measured relative to the perfect lattice. The edges of extended defects feature enhanced electric fields, which can be used to trap diffusing adatoms. The magnitude of the electric field produced by the different types of edges is compared to monolayer areas, confirming previous predictions regarding their stability. These observations provide insight into the properties of this interesting material, serving as a suitable platform on which to test the limits of this technique, and encourage further work, such as dynamic experiments coupled with techniques.
通过使用最近引入的差分相衬成像技术，在扫描透射电子显微镜内将六方氮化硼中的电场分布映射到原子水平。通过使用定制开发的硬件和软件，实时计算并显示这些图谱以及传统的环形暗场图像。在硼单空位周围观察到电场增强，随后相对于完美晶格进行映射和测量。扩展缺陷的边缘具有增强的电场，可用于捕获扩散的吸附原子。将不同类型边缘产生的电场强度与单层区域进行比较，证实了先前关于其稳定性的预测。这些观察结果有助于深入了解这种有趣材料的性质，为测试该技术的极限提供了一个合适的平台，并鼓励开展进一步的工作，如结合其他技术的动态实验。
