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用人体皮肤实现的整流忆阻器桥电路。

Rectifying Memristor Bridge Circuit Realized with Human Skin.

作者信息

Pabst Oliver

机构信息

Department of Physics, University of Oslo, Oslo, Norway.

出版信息

J Electr Bioimpedance. 2018 Dec 31;9(1):184-192. doi: 10.2478/joeb-2018-0023. eCollection 2018 Jan.

DOI:10.2478/joeb-2018-0023
PMID:33584934
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7852024/
Abstract

It has been demonstrated before that human skin can be modeled as a memristor (memory resistor). Here we realize a memristor bridge by applying two voltages of opposite signs at two different skin sites. By this setup it is possible to use human skin as a frequency doubler and half-wave rectifier which is an application of the non-linear electrical properties of human skin. The corresponding electrical measurements are non-linear since these are affected by the applied stimulus itself.

摘要

之前已经证明,人体皮肤可以被建模为一个忆阻器(记忆电阻器)。在这里,我们通过在两个不同的皮肤部位施加两个相反符号的电压来实现一个忆阻器电桥。通过这种设置,可以将人体皮肤用作倍频器和半波整流器,这是人体皮肤非线性电学特性的一种应用。相应的电学测量是非线性的,因为这些测量受到所施加刺激本身的影响。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c652/7852024/664cbb896579/joeb-09-184-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c652/7852024/de72c21f9bb2/joeb-09-184-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c652/7852024/486a5b78a2f7/joeb-09-184-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c652/7852024/c7776da7b6c2/joeb-09-184-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c652/7852024/99055f5fc495/joeb-09-184-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c652/7852024/664cbb896579/joeb-09-184-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c652/7852024/de72c21f9bb2/joeb-09-184-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c652/7852024/486a5b78a2f7/joeb-09-184-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c652/7852024/c7776da7b6c2/joeb-09-184-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c652/7852024/99055f5fc495/joeb-09-184-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c652/7852024/664cbb896579/joeb-09-184-g005.jpg

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引用本文的文献

1
Information can be stored in the human skin memristor which has non-volatile memory.信息可以存储在具有非易失性记忆的人类皮肤忆阻器中。
Sci Rep. 2019 Dec 17;9(1):19260. doi: 10.1038/s41598-019-55749-9.

本文引用的文献

1
The non-linear electrical properties of human skin make it a generic memristor.人体皮肤的非线性电学特性使其成为通用忆阻器。
Sci Rep. 2018 Oct 25;8(1):15806. doi: 10.1038/s41598-018-34059-6.
2
Instrumentation, electrode choice and challenges in human skin memristor measurement.人体皮肤忆阻器测量中的仪器设备、电极选择及挑战
Annu Int Conf IEEE Eng Med Biol Soc. 2017 Jul;2017:1844-1848. doi: 10.1109/EMBC.2017.8037205.
3
Training and operation of an integrated neuromorphic network based on metal-oxide memristors.基于金属氧化物忆阻器的集成神经形态网络的训练和操作。
Nature. 2015 May 7;521(7550):61-4. doi: 10.1038/nature14441.
4
Memristors in plants.植物中的忆阻器。
Plant Signal Behav. 2014;9(3):e28152. doi: 10.4161/psb.28152. Epub 2014 Feb 20.
5
Integration of nanoscale memristor synapses in neuromorphic computing architectures.纳米级忆阻器突触在神经形态计算架构中的集成。
Nanotechnology. 2013 Sep 27;24(38):384010. doi: 10.1088/0957-4484/24/38/384010. Epub 2013 Sep 2.
6
Observation of conductance quantization in oxide-based resistive switching memory.观察基于氧化物的电阻式开关存储器中的电导量子化。
Adv Mater. 2012 Aug 2;24(29):3941-6. doi: 10.1002/adma.201201506. Epub 2012 Jun 18.
7
Sub-nanosecond switching of a tantalum oxide memristor.氧化钽忆阻器的亚纳秒级开关。
Nanotechnology. 2011 Dec 2;22(48):485203. doi: 10.1088/0957-4484/22/48/485203. Epub 2011 Nov 9.
8
Memristive model of electro-osmosis in skin.皮肤电渗的忆阻模型。
Phys Rev E Stat Nonlin Soft Matter Phys. 2011 Mar;83(3 Pt 1):031916. doi: 10.1103/PhysRevE.83.031916. Epub 2011 Mar 24.
9
Nanoscale memristor device as synapse in neuromorphic systems.纳米级忆阻器器件作为神经形态系统中的突触。
Nano Lett. 2010 Apr 14;10(4):1297-301. doi: 10.1021/nl904092h.
10
The missing memristor found.缺失的忆阻器被找到。
Nature. 2008 May 1;453(7191):80-3. doi: 10.1038/nature06932.