Hong Sungwook, Tiwari Subodh, Krishnamoorthy Aravind, Nomura Ken-Ichi, Sheng Chunyang, Kalia Rajiv K, Nakano Aiichiro, Shimojo Fuyuki, Vashishta Priya
Collaboratory for Advanced Computing and Simulations, Department of Chemical Engineering & Materials Science, Department of Physics & Astronomy, and Department of Computer Science, University of Southern California, Los Angeles, California 90089-0242, United States.
Department of Physics and Engineering, California State University Bakersfield, Bakersfield, California 93311, United States.
J Phys Chem Lett. 2021 Feb 25;12(7):1997-2003. doi: 10.1021/acs.jpclett.0c03280. Epub 2021 Feb 17.
The typical layered transition metal dichalcogenide (TMDC) material, MoS, is considered a promising candidate for the next-generation electronic device due to its exceptional physical and chemical properties. In chemical vapor deposition synthesis, the sulfurization of MoO powders is an essential reaction step in which the MoO reactants are converted into MoS products. Recent studies have suggested using an HS/H mixture to reduce MoO powders in an effective way. However, reaction mechanisms associated with the sulfurization of MoO by the HS/H mixture are yet to be fully understood. Here, we perform quantum molecular dynamics (QMD) simulations to investigate the sulfurization of MoO flakes using two different gaseous environments: pure HS precursors and a HS/H mixture. Our QMD results reveal that the HS/H mixture could effectively reduce and sulfurize the MoO reactants through additional reactions of H and MoO, thereby providing valuable input for experimental synthesis of higher-quality TMDC materials.
典型的层状过渡金属二硫属化物(TMDC)材料MoS,因其优异的物理和化学性质,被认为是下一代电子器件的有前途的候选材料。在化学气相沉积合成中,MoO粉末的硫化是一个关键反应步骤,其中MoO反应物被转化为MoS产物。最近的研究表明,使用HS/H混合物可以有效地还原MoO粉末。然而,与HS/H混合物对MoO进行硫化相关的反应机制尚未完全了解。在此,我们进行量子分子动力学(QMD)模拟,以研究在两种不同气体环境下MoO薄片的硫化过程:纯HS前驱体和HS/H混合物。我们的QMD结果表明,HS/H混合物可以通过H与MoO的额外反应有效地还原和硫化MoO反应物,从而为高质量TMDC材料的实验合成提供有价值的参考。