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反金字塔形MoS/WS垂直异质结构的一步化学气相沉积

Single-step chemical vapour deposition of anti-pyramid MoS/WS vertical heterostructures.

作者信息

Bai Xueyin, Li Shisheng, Das Susobhan, Du Luojun, Dai Yunyun, Yao Lide, Raju Ramesh, Du Mingde, Lipsanen Harri, Sun Zhipei

机构信息

Department of Electronics and Nanoengineering, Aalto University, Finland.

International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Japan.

出版信息

Nanoscale. 2021 Mar 4;13(8):4537-4542. doi: 10.1039/d0nr08281c.

DOI:10.1039/d0nr08281c
PMID:33599628
Abstract

Van der Waals heterostructures are the fundamental building blocks of electronic and optoelectronic devices. Here we report that, through a single-step chemical vapour deposition (CVD) process, high-quality vertical bilayer MoS2/WS2 heterostructures with a grain size up to ∼60 μm can be synthesized from molten salt precursors, Na2MoO4 and Na2WO4. Instead of normal pyramid vertical heterostructures grown by CVD, this method synthesizes an anti-pyramid MoS2/WS2 structure, which is characterized by Raman, photoluminescence and second harmonic generation microscopy. Our facile CVD strategy for synthesizing anti-pyramid structures unveils a new synthesis route for the products of two-dimensional heterostructures and their devices for application.

摘要

范德华异质结构是电子和光电器件的基本构建单元。在此我们报告,通过一步化学气相沉积(CVD)工艺,可以从熔盐前驱体Na2MoO4和Na2WO4合成出高质量的垂直双层MoS2/WS2异质结构,其晶粒尺寸可达约60μm。该方法合成的不是通过CVD生长的普通金字塔形垂直异质结构,而是一种反金字塔形的MoS2/WS2结构,通过拉曼光谱、光致发光和二次谐波产生显微镜对其进行了表征。我们用于合成反金字塔结构的简便CVD策略为二维异质结构及其应用器件的产物揭示了一种新的合成途径。

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