二维过渡金属二硫属化物的盐辅助化学气相沉积法

International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan.

iScience. 2021 Oct 7;24(11):103229. doi: 10.1016/j.isci.2021.103229. eCollection 2021 Nov 19.

Salt-assisted chemical vapor deposition (SA-CVD), which uses halide salts (e.g., NaCl, KBr, etc.) and molten salts (e.g., NaMoO, NaWO, etc.) as precursors, is one of the most popular methods favored for the fabrication of two-dimensional (2D) materials such as atomically thin metal chalcogenides, graphene, and h-BN. In this review, the distinct functions of halogens (F, Cl, Br, I) and alkali metals (Li, Na, K) in SA-CVD are first clarified. Based on the current development in SA-CVD growth and its related reaction modes, the existing methods are categorized into the Salt 1.0 (halide salts-based) and Salt 2.0 (molten salts-based) techniques. The achievements, advantages, and limitations of each technique are discussed in detail. Finally, new perspectives are proposed for the application of SA-CVD in the synthesis of 2D transition metal dichalcogenides for advanced electronics.

盐辅助化学气相沉积（SA-CVD）使用卤化物盐（如NaCl、KBr等）和熔盐（如NaMoO、NaWO等）作为前驱体，是制备二维（2D）材料（如原子级薄的金属硫属化物、石墨烯和h-BN）最常用的方法之一。在本综述中，首先阐明了卤素（F、Cl、Br、I）和碱金属（Li、Na、K）在SA-CVD中的独特作用。基于SA-CVD生长及其相关反应模式的当前发展，现有方法被分为盐1.0（基于卤化物盐）和盐2.0（基于熔盐）技术。详细讨论了每种技术的成果、优点和局限性。最后，提出了SA-CVD在用于先进电子器件的二维过渡金属二硫属化物合成中的应用新观点。