利用金属卤化物钙钛矿的不稳定性掺杂半导体纳米复合材料
Exploiting the Lability of Metal Halide Perovskites for Doping Semiconductor Nanocomposites.
作者信息
Calcabrini Mariano, Genç Aziz, Liu Yu, Kleinhanns Tobias, Lee Seungho, Dirin Dmitry N, Akkerman Quinten A, Kovalenko Maksym V, Arbiol Jordi, Ibáñez Maria
机构信息
Institute of Science and Technology Austria, Klosterneuburg 3400, Austria.
Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona 08193, Catalonia, Spain.
出版信息
ACS Energy Lett. 2021 Feb 12;6(2):581-587. doi: 10.1021/acsenergylett.0c02448. Epub 2021 Jan 21.
Cesium lead halides have intrinsically unstable crystal lattices and easily transform within perovskite and nonperovskite structures. In this work, we explore the conversion of the perovskite CsPbBr into CsPbBr in the presence of PbS at 450 °C to produce doped nanocrystal-based composites with embedded CsPbBr nanoprecipitates. We show that PbBr is extracted from CsPbBr and diffuses into the PbS lattice with a consequent increase in the concentration of free charge carriers. This new doping strategy enables the adjustment of the density of charge carriers between 10 and 10 cm, and it may serve as a general strategy for doping other nanocrystal-based semiconductors.
卤化铯铅具有本质上不稳定的晶格，并且很容易在钙钛矿结构和非钙钛矿结构之间转变。在这项工作中，我们探索了在450℃下，在PbS存在的情况下，钙钛矿CsPbBr向CsPbBr的转变，以制备具有嵌入CsPbBr纳米沉淀物的掺杂纳米晶体基复合材料。我们表明，PbBr从CsPbBr中被提取出来并扩散到PbS晶格中，从而导致自由电荷载流子浓度增加。这种新的掺杂策略能够将电荷载流子密度调整到10到10厘米之间，并且它可能作为一种掺杂其他纳米晶体基半导体的通用策略。
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