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用于电子学和光电子学的二维同质结。

2D Homojunctions for Electronics and Optoelectronics.

作者信息

Wang Fakun, Pei Ke, Li Yuan, Li Huiqiao, Zhai Tianyou

机构信息

State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China.

出版信息

Adv Mater. 2021 Apr;33(15):e2005303. doi: 10.1002/adma.202005303. Epub 2021 Feb 28.

DOI:10.1002/adma.202005303
PMID:33644885
Abstract

In the post-Moore era, 2D materials with rich physical properties have attracted widespread attention from the scientific and industrial communities. Among 2D materials, the 2D homojunctions are of great promise in designing novel electronic and optoelectronic devices due to their unique geometries and properties such as homogeneous components, perfect lattice matching, and efficient charge transfer at the interface. In this article, a pioneering review focusing on the structural design and device application of 2D homojunctions such as p-n homojunctions, heterophase homojunctions, and layer-engineered homojunctions is provided. The preparation strategies to construct 2D homojunctions including vapor-phase deposition, lithium intercalation, laser irradiation, chemical doping, electrostatic doping, and photodoping are summarized in detail. Specifically, a careful review on the applications of the 2D homojunctions in electronics (e.g., field-effect transistors, rectifiers, and inverters) and optoelectronics (e.g., light-emitting diodes, photovoltaics, and photodetectors) is provided. Eventually, the current challenges and future perspectives are commented for promoting the rapid development of 2D homojunctions.

摘要

在摩尔时代之后,具有丰富物理特性的二维材料引起了科学界和工业界的广泛关注。在二维材料中,二维同质结因其独特的几何结构和特性,如成分均匀、晶格匹配完美以及界面处高效的电荷转移,在设计新型电子和光电器件方面具有巨大潜力。本文提供了一篇开创性综述,重点关注p-n同质结、异质相同质结和层工程同质结等二维同质结的结构设计和器件应用。详细总结了构建二维同质结的制备策略,包括气相沉积、锂嵌入、激光辐照、化学掺杂、静电掺杂和光掺杂。具体而言,对二维同质结在电子学(如场效应晶体管、整流器和逆变器)和光电子学(如发光二极管、光伏电池和光电探测器)中的应用进行了仔细综述。最后,对促进二维同质结快速发展的当前挑战和未来前景进行了评论。

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