Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), Campus de Cantoblanco, E-28049 Madrid, Spain.
Chem Soc Rev. 2018 May 8;47(9):3339-3358. doi: 10.1039/c7cs00880e.
Recent research in two-dimensional (2D) materials has boosted a renovated interest in the p-n junction, one of the oldest electrical components which can be used in electronics and optoelectronics. 2D materials offer remarkable flexibility to design novel p-n junction device architectures, not possible with conventional bulk semiconductors. In this Review we thoroughly describe the different 2D p-n junction geometries studied so far, focusing on vertical (out-of-plane) and lateral (in-plane) 2D junctions and on mixed-dimensional junctions. We discuss the assembly methods developed to fabricate 2D p-n junctions making a distinction between top-down and bottom-up approaches. We also revise the literature studying the different applications of these atomically thin p-n junctions in electronic and optoelectronic devices. We discuss experiments on 2D p-n junctions used as current rectifiers, photodetectors, solar cells and light emitting devices. The important electronics and optoelectronics parameters of the discussed devices are listed in a table to facilitate their comparison. We conclude the Review with a critical discussion about the future outlook and challenges of this incipient research field.
二维（2D）材料的最新研究激发了人们对 p-n 结的重新关注，p-n 结是最早的电子元件之一，可用于电子学和光电学。2D 材料为设计新型 p-n 结器件结构提供了显著的灵活性，这是传统体半导体所不可能实现的。在这篇综述中，我们全面描述了迄今为止研究过的不同 2D p-n 结几何结构，重点介绍了垂直（面外）和横向（面内）2D 结以及混合维结。我们讨论了为制造 2D p-n 结而开发的组装方法，区分了自上而下和自下而上的方法。我们还回顾了研究这些原子层薄的 p-n 结在电子学和光电学器件中的不同应用的文献。我们讨论了用作电流整流器、光电探测器、太阳能电池和发光器件的 2D p-n 结的实验。在表格中列出了所讨论器件的重要电子学和光电学参数，以方便比较。我们在综述的最后对这个新兴研究领域的未来展望和挑战进行了批判性讨论。
