Chen Yuliang, Wang Zhong, Zou Chongwen, Parkin Stuart S P
Max Planck Institute of Microstructure Physics, 06120 Halle, Germany.
National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology, University of Science and Technology of China, 230029 Hefei, China.
Nano Lett. 2024 Nov 13;24(45):14420-14426. doi: 10.1021/acs.nanolett.4c04337. Epub 2024 Oct 30.
Two-dimensional materials show great potential for future electronics beyond silicon materials. Here, we report an exotic multiple-port device based on multiple electrically tunable planar p-n homojunctions formed in a two-dimensional (2D) ambipolar semiconductor, tungsten diselenide (WSe). In this device, we prepare multiple gates consisting of a global gate and several local gates, by which electrostatically induced holes and electrons are simultaneously accumulated in a WSe channel, and furthermore, at the boundaries, p-n junctions are formed as directly visualized by Kelvin probe force microscopy. Therefore, in addition to the gate voltages in our device, the drain/source bias can also be used to switch the 2D WSe channel on/off due to the rectification effect of the formed p-n junctions. More importantly, when the voltage on the global gate electrode is altered, all p-n junctions are affected, which makes it possible to perform parallel logic operations.
二维材料在超越硅材料的未来电子学领域展现出巨大潜力。在此，我们报道了一种基于在二维（2D）双极半导体二硒化钨（WSe₂）中形成的多个电可调平面p-n同质结的奇特多端口器件。在该器件中，我们制备了由一个全局栅极和几个局部栅极组成的多个栅极，通过这些栅极，静电感应的空穴和电子同时在WSe₂沟道中积累，此外，在边界处，通过开尔文探针力显微镜直接观察到形成了p-n结。因此，除了我们器件中的栅极电压外，由于所形成的p-n结的整流效应，漏极/源极偏置也可用于切换二维WSe₂沟道的导通/关断。更重要的是，当全局栅极电极上的电压改变时，所有p-n结都会受到影响，这使得执行并行逻辑操作成为可能。
