Rudno-Rudziński Wojciech, Burakowski Marek, Reithmaier Johann P, Musiał Anna, Benyoucef Mohamed
Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland.
Institute of Nanostructure Technologies and Analytics (INA), Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany.
Materials (Basel). 2021 Feb 17;14(4):942. doi: 10.3390/ma14040942.
Magneto-optical parameters of trions in novel large and symmetric InP-based quantum dots, uncommon for molecular beam epitaxy-grown nanostructures, with emission in the third telecom window, are measured in Voigt and Faraday configurations of an external magnetic field. The diamagnetic coefficients are found to be in the range of 1.5-4 μeV/T, and 8-15 μeV/T, respectively out-of-plane and in-plane of the dots. The determined values of diamagnetic shifts are related to the anisotropy of dot sizes. Trion g-factors are measured to be relatively small, in the range of 0.3-0.7 and 0.5-1.3, in both configurations, respectively. Analysis of single carrier g-factors, based on the formalism of spin-correlated orbital currents, leads to similar values for hole and electron of ~0.25 for Voigt and g ≈ -5; g ≈ +6 for Faraday configuration of the magnetic field. Values of g-factors close to zero measured in Voigt configuration make the investigated dots promising for electrical tuning of the g-factor sign, required for schemes of single spin control in qubit applications.
在新型大尺寸且对称的基于磷化铟的量子点中,激子的磁光参数在外部磁场的沃伊特和法拉第配置下进行了测量。这种量子点对于分子束外延生长的纳米结构来说并不常见,并且在第三通信窗口有发射。发现抗磁系数分别在点的面外和面内处于1.5 - 4 μeV/T和8 - 15 μeV/T的范围内。所确定的抗磁位移值与点尺寸的各向异性有关。在两种配置下,测量得到的激子g因子相对较小,分别在0.3 - 0.7和0.5 - 1.3的范围内。基于自旋相关轨道电流形式对单载流子g因子的分析,对于空穴和电子得出了类似的值,在磁场的沃伊特配置中约为0.25,在法拉第配置中g≈ -5;g≈ +6。在沃伊特配置中测量到的接近零的g因子值,使得所研究的量子点对于量子比特应用中单自旋控制方案所需的g因子符号的电调谐很有前景。