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宽带隙钙锡氧化物钙钛矿作为用于自供电高性能p-i-n光电探测器的高效选择性深紫外吸收剂

Wide-Bandgap CaSnO Perovskite As an Efficient and Selective Deep-UV Absorber for Self-Powered and High-Performance p-i-n Photodetector.

作者信息

Tran Manh Hoang, Park Taehyun, Hur Jaehyun

机构信息

Department of Chemical and Biological Engineering, Gachon University, Seongnam, Gyeonggi 13120, Republic of Korea.

出版信息

ACS Appl Mater Interfaces. 2021 Mar 24;13(11):13372-13382. doi: 10.1021/acsami.0c23032. Epub 2021 Mar 12.

DOI:10.1021/acsami.0c23032
PMID:33709683
Abstract

Calcium stannate (CaSnO) is an inorganic perovskite material with an ultrawide bandgap (4.2-4.4 eV) that is associated with its unique structural characteristics. Owing to its remarkable optical and electric properties and high physical and chemical stability, it has recently drawn significant interest for various applications such as photocatalysts for the degradation of organic compounds and hydrogen production under UV radiation, gas sensors, and thermally stable capacitors. In this study, we demonstrate a self-powered deep-UV (DUV) p-i-n photodetector consisting of CaSnO thin film as an efficient DUV absorber via a low-temperature solution process. The physical, optical, and electrical properties of the as-synthesized CaSnO are characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, high-resolution transmission electron microscopy, ultraviolet-visible spectroscopy, photoluminescence spectroscopy, space charge limited current, and four-point probe measurements. As a key component in a p-i-n DUV photodetector, the thickness of the CaSnO absorber layer and operating bias are optimized to enhance charge carrier transport, light absorption, and signal-to-noise ratio. As a result, the optimized device shows a high performance at zero bias under 254 nm UV illumination: with a specific detectivity of 1.56 × 10 Jones, fast rise/fall time of 80/70 ms, and high 254:365 nm photocurrent rejection ratio of 5.5 along with a stable photoresponse during 100 continuous cycles initially as well as after 1 month of storage. Accordingly, this study suggests that a novel CaSnO-based photodiode prepared via a solution process can be employed for many practical DUV-detection applications.

摘要

锡酸钙(CaSnO)是一种无机钙钛矿材料,具有超宽带隙(4.2 - 4.4电子伏特),这与其独特的结构特征相关。由于其卓越的光学和电学性质以及高物理和化学稳定性,它最近在各种应用中引起了极大的兴趣,例如用于有机化合物降解和紫外线辐射下制氢的光催化剂、气体传感器以及热稳定电容器。在本研究中,我们展示了一种自供电深紫外(DUV)p-i-n光电探测器,该探测器通过低温溶液法由CaSnO薄膜作为高效的深紫外吸收剂组成。通过X射线衍射、拉曼光谱、扫描电子显微镜、高分辨率透射电子显微镜、紫外可见光谱、光致发光光谱、空间电荷限制电流和四点探针测量对合成的CaSnO的物理、光学和电学性质进行了表征。作为p-i-n深紫外光电探测器的关键组件,对CaSnO吸收层的厚度和工作偏压进行了优化,以增强电荷载流子传输、光吸收和信噪比。结果,优化后的器件在254纳米紫外光照下零偏压时表现出高性能:比探测率为1.56×10琼斯,快速上升/下降时间为80/70毫秒,254:365纳米光电流抑制比高达5.5,并且在最初的100个连续循环以及储存1个月后都具有稳定的光响应。因此,本研究表明通过溶液法制备的新型CaSnO基光电二极管可用于许多实际的深紫外检测应用。

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