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基于生物硒的忆阻器辅助逻辑

BiOSe-Based Memristor-Aided Logic.

作者信息

Liu Bo, Zhao Yudi, Verma Dharmendra, Wang Le An, Liang Hanyuan, Zhu Hui, Li Lain-Jong, Hou Tuo-Hung, Lai Chao-Sung

机构信息

Faculty of Information Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, People's Republic of China.

School of Information and Communication Engineering, Beijing Information Science & Technology University, Beijing 100101, China.

出版信息

ACS Appl Mater Interfaces. 2021 Apr 7;13(13):15391-15398. doi: 10.1021/acsami.1c00177. Epub 2021 Mar 16.

DOI:10.1021/acsami.1c00177
PMID:33723989
Abstract

The implementation of two-dimensional materials into memristor architectures has recently been a new research focus by taking advantage of their atomic thickness, unique lattice, and physical and electronic properties. Among the van der Waals family, BiOSe is an emerging ternary two-dimensional layered material with ambient stability, suitable band structure, and high conductivity that exhibits high potential for use in electronic applications. In this work, we propose and experimentally demonstrate a BiOSe-based memristor-aided logic. By carefully tuning the electric field polarity of BiOSe through a Pd contact, a reconfigurable NAND gate with zero static power consumption is realized. To provide more knowledge on NAND operation, a kinetic Monte Carlo simulation is carried out. Because the NAND gate is a universal logic gate, cascading additional NAND gates can exhibit versatile logic functions. Therefore, the proposed BiOSe-based MAGIC can be a promising building block for developing next-generation in-memory logic computers with multiple functions.

摘要

通过利用二维材料的原子厚度、独特晶格以及物理和电子特性,将其应用于忆阻器架构最近已成为一个新的研究热点。在范德华材料家族中,BiOSe是一种新兴的三元二维层状材料,具有环境稳定性、合适的能带结构和高导电性,在电子应用中展现出很高的应用潜力。在这项工作中,我们提出并通过实验证明了一种基于BiOSe的忆阻器辅助逻辑。通过Pd接触仔细调节BiOSe的电场极性,实现了具有零静态功耗的可重构与非门。为了提供更多关于与非门操作的知识,进行了动力学蒙特卡罗模拟。由于与非门是通用逻辑门,级联额外的与非门可以展现出多种逻辑功能。因此,所提出的基于BiOSe的MAGIC有望成为开发具有多种功能的下一代内存逻辑计算机的有前途的构建块。

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引用本文的文献

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BiOSe-based CBRAM integrated artificial synapse.基于氧化铋硒的忆阻器集成人工突触。
Heliyon. 2023 Nov 17;9(12):e22512. doi: 10.1016/j.heliyon.2023.e22512. eCollection 2023 Dec.
2
Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing.基于氧化石墨烯的忆阻式内存逻辑电路实现常关计算。
Nanomaterials (Basel). 2023 Feb 13;13(4):710. doi: 10.3390/nano13040710.
3
BiOSe-based integrated multifunctional optoelectronics.基于生物硒的集成多功能光电子学。
Nanoscale Adv. 2022 Aug 1;4(18):3832-3844. doi: 10.1039/d2na00245k. eCollection 2022 Sep 13.