Tian Zhenzhen, Yuan Xiaoming, Zhang Ziran, Jia Wuao, Zhou Jian, Huang Han, Meng Jianqiao, He Jun, Du Yong
Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, China.
College of Mechanical and Vehicle Engineering, Hunan University, Changsha, 410082, China.
Nanoscale Res Lett. 2021 Mar 20;16(1):49. doi: 10.1186/s11671-021-03505-2.
Growth of high-quality III-V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III-V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III-V nanowire growth studies provide an excellent example to guide the nanowire growth.
以低成本生长高质量的III-V族纳米线用于光电子和电子应用是长期以来的研究追求。然而，使用化学气相沉积法对III-V族纳米线进行可控合成具有挑战性且缺乏理论指导。在此，我们展示了使用真空化学气相沉积法在大面积上高密度生长InP和GaP纳米线。结果表明，需要较高的生长温度以避免氧化物形成并提高InP纳米线的晶体纯度。向反应釜中引入少量Ga会导致形成GaP纳米线而非三元InGaP纳米线。应用相图计算（CALPHAD）方法中的热力学计算来解释这种新的生长现象。凝固过程的成分和驱动力计算表明，催化剂中仅1原子%的Ga就足以将纳米线的形成从InP调整为GaP，因为GaP成核显示出大得多的驱动力。热力学研究与III-V族纳米线生长研究相结合为指导纳米线生长提供了一个很好的例子。
