State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Nanoscale. 2017 Oct 19;9(40):15416-15422. doi: 10.1039/c7nr06118h.
Heterostructured ZnS/InP nanowires, composed of single-crystalline ZnS nanowires coated with a layer of InP shell, were synthesized via a one-step chemical vapor deposition process. As-grown heterostructured ZnS/InP nanowires exhibited an ultrahigh I/I ratio of 4.91 × 10, a high photoconductive gain of 1.10 × 10, a high detectivity of 1.65 × 10 Jones and high response speed even in the case of very weak ultraviolet light illumination (1.87 μW cm). The values are much higher than those of previously reported bare ZnS nanowires owing to the formation of core/shell heterostructures. Flexible ultraviolet photodetectors were also fabricated with the heterostructured ZnS/InP nanowires, which showed excellent mechanical flexibility, electrical stability and folding endurance besides excellent photoresponse properties. The results elucidated that the heterostructured ZnS/InP nanowires could find good applications in next generation flexible optoelectronic devices.
由单晶 ZnS 纳米线包覆一层 InP 壳组成的 ZnS/InP 异质结构纳米线通过一步化学气相沉积法合成。所生长的 ZnS/InP 异质结构纳米线表现出超高的 I/I 比值（4.91×10）、高光导增益（1.10×10）、高探测率（1.65×10 琼斯）和超快响应速度，即使在非常弱的紫外光照射下（1.87 μW cm）也是如此。由于形成了核/壳异质结构，这些值远高于以前报道的裸 ZnS 纳米线的值。还使用异质结构的 ZnS/InP 纳米线制造了柔性紫外光探测器，该探测器除了具有优异的光电响应性能外，还表现出优异的机械柔韧性、电稳定性和折叠耐久性。结果表明，异质结构的 ZnS/InP 纳米线在下一代柔性光电设备中有很好的应用前景。
