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单层二硫化钼边缘与金(111)上扶手椅型石墨烯纳米带之间的横向界面

Lateral Interfaces between Monolayer MoS Edges and Armchair Graphene Nanoribbons on Au(111).

作者信息

Haastrup Mark J, Mammen Mathias H R, Rodríguez-Fernández Jonathan, Lauritsen Jeppe V

机构信息

Interdisciplinary Nanoscience Center (iNANO), Aarhus University, 8000 Aarhus C, Denmark.

出版信息

ACS Nano. 2021 Apr 27;15(4):6699-6708. doi: 10.1021/acsnano.0c10062. Epub 2021 Mar 22.

Abstract

The realization of electronic devices based on heterostructures of metallic, semiconducting, or insulating two-dimensional materials relies on the ability to form structurally coherent and clean interfaces between them, vertically or laterally. Lateral two-dimensional heterostructures that fuse together two different materials in a well-controlled manner have attracted recent attention, but the methods to form seamless interfaces between structurally dissimilar materials, such as graphene and transition-metal dichalcogenides (TMDCs), are still limited. Here, we investigate the structure of the lateral interfaces that arise between monolayer MoS flakes on Au(111) and two families of armchair graphene nanoribbons (GNRs) created through on-surface assisted Ullmann coupling using regular organobromine precursors for GNR synthesis. We find that parallel alignment between the GNR armchair edge and MoS leads to van der Waals bonded nanoribbons, whereas a perpendicular orientation is characterized by a single phenyl-group of the GNR covalently bonded to S on the edge. The edge-on bonding is facilitated by a hydrogen treatment of the MoS, and temperature control during growth is shown to influence the nanoribbon width and the yield of covalently attached nanoribbons. Interestingly, the temperatures needed to drive the intramolecular dehydrogenation during GNR formation are lowered significantly by the presence of MoS, which we attribute to enhanced hydrogen recombination at the MoS edges. These results are a demonstration of a viable method to make laterally bonded graphene nanostructures to TMDCs to be used in further investigations of two-dimensional heterostructure junctions.

摘要

基于金属、半导体或绝缘二维材料异质结构的电子器件的实现依赖于在它们之间垂直或横向形成结构连贯且洁净界面的能力。以可控方式融合两种不同材料的横向二维异质结构近来受到了关注,但在结构不同的材料(如石墨烯和过渡金属二卤化物(TMDCs))之间形成无缝界面的方法仍然有限。在此,我们研究了在Au(111)上的单层MoS薄片与通过使用用于GNR合成的常规有机溴前驱体的表面辅助乌尔曼偶联制备的两类扶手椅型石墨烯纳米带(GNRs)之间形成的横向界面的结构。我们发现,GNR扶手椅边缘与MoS之间的平行排列会导致范德华键合的纳米带,而垂直取向的特征是GNR的单个苯基与边缘的S共价键合。MoS的氢处理促进了这种边缘键合,并且生长过程中的温度控制显示会影响纳米带宽度和共价连接纳米带的产率。有趣的是,由于MoS的存在,在GNR形成过程中驱动分子内脱氢所需的温度显著降低,我们将其归因于MoS边缘处增强的氢复合。这些结果证明了一种可行的方法,可用于制备与TMDCs横向键合的石墨烯纳米结构,以用于二维异质结构结的进一步研究。

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