以氧化铝作为隧穿钝化中间层的高性能MoO/n-Si异质结近红外光电探测器。

High-performance MoO/n-Si heterojunction NIR photodetector with aluminum oxide as a tunneling passivation interlayer.

作者信息

Xu Yajun, Shen Honglie, Xu Binbin, Wang Zehui, Li Yufang, Lai Binkang, Zhang Jingzhe

机构信息

College of Materials Science and Technology, Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, People's Republic of China.

Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou University, Changzhou, 213164, People's Republic of China.

出版信息

Nanotechnology. 2021 Apr 16;32(27). doi: 10.1088/1361-6528/abf37c.

DOI:10.1088/1361-6528/abf37c

PMID:33784656

Abstract

The most effective and potential approach to improve the performance of heterojunction photodetectors is to obtain favorable interfacial passivation by adding an insertion layer. In this paper, MoO/AlO/n-Si heterojunction photodetectors with excellent photocurrents, responsivity and detectivity were fabricated, in which alumina acts as a tunneling passivation layer. By optimizing the post-annealing treatment temperature of the MoOand the thickness of the ultra-thin AlO, the photodetector achieved a ratio of photocurrent to dark current of 3.1 × 10, a photoresponsivity of 7.11 A W(@980 nm) and a detective of 9.85 × 10Jones at -5 V bias. Besides, a self-driven response of 0.17 A Wand a high photocurrent/dark current ratio of 2.07 × 10were obtained. The result demonstrated that optimizing the interface of heterojunctions is a promising way to obtain a heterojunction photodetector with high-performance.

摘要

提高异质结光电探测器性能最有效且具潜力的方法是通过添加插入层来实现良好的界面钝化。本文制备了具有优异光电流、响应度和探测率的MoO/AlO/n-Si异质结光电探测器，其中氧化铝作为隧穿钝化层。通过优化MoO的退火后处理温度和超薄AlO的厚度，该光电探测器在-5 V偏压下实现了光电流与暗电流之比为3.1×10，光响应度为7.11 A/W（@980 nm），探测率为9.85×10琼斯。此外，还获得了0.17 A/W的自驱动响应和2.07×10的高光电流/暗电流比。结果表明，优化异质结界面是获得高性能异质结光电探测器的一种有前途的方法。