Jayaraman Jayanthan P, Hamdan Muhammed, Velpula Manishankar, Kaisare Niket S, Chandiran Aravind Kumar
Department of Chemical Engineering, Indian Institute of Technology Madras, Adyar, Chennai, Tamil Nadu 600036, India.
ACS Appl Mater Interfaces. 2021 Apr 14;13(14):16267-16278. doi: 10.1021/acsami.0c22654. Epub 2021 Apr 2.
Photoelectrochemical water oxidation is a challenging reaction in solar water splitting due to the parasitic recombination process, sluggish catalytic activity, and electrode stability. Oxide semiconductors are stable in an aqueous medium but show huge charge carrier recombination. Creation of a heterojunction is found to be effective for extracting the photogenerated electrons/holes before they recombine to the ground state. In this work, we created a heterojunction of BiVO with vacancy-ordered halide perovskite CsPtI and used it as a photoanode in PEC water oxidation. CsPtI is the only halide perovskite that is found to be extremely stable even in strong acids and bases. We utilized the stability of this material and its panchromatic visible light absorption property and made the first unprotected heterojunction dual-absorber photoanode for PEC water oxidation. At 1.23 V (vs RHE), bare BiVO gave 0.6 mA cm photocurrent density, whereas the BiVO/CsPtI heterojunction shows 0.92 mA cm. With the addition of IrO cocatalyst, at 1.23 V (vs RHE), the heterojunction gave ∼2 mA cm. To obtain 2 mA cm photocurrent, pure BiVO requires 560 mV overpotential, whereas the heterojunction requires 250 mV. The increase in the photocurrent arises from the increase in the efficiency of charge separation from BiVO to CsPtI and the complementary absorption offered by the latter.
由于存在寄生复合过程、催化活性迟缓以及电极稳定性问题,光电化学水氧化在太阳能水分解中是一个具有挑战性的反应。氧化物半导体在水性介质中稳定,但显示出巨大的电荷载流子复合。发现创建异质结对于在光生电子/空穴复合到基态之前提取它们是有效的。在这项工作中,我们创建了具有空位有序卤化物钙钛矿CsPtI的BiVO异质结,并将其用作PEC水氧化中的光阳极。CsPtI是唯一一种即使在强酸和强碱中也极其稳定的卤化物钙钛矿。我们利用了这种材料的稳定性及其全色可见光吸收特性,制造了第一个用于PEC水氧化的无保护异质结双吸收体光阳极。在1.23 V(相对于可逆氢电极)下,裸BiVO产生0.6 mA/cm²的光电流密度,而BiVO/CsPtI异质结显示为0.92 mA/cm²。添加IrO助催化剂后,在1.23 V(相对于可逆氢电极)下,异质结产生约2 mA/cm²的电流。为了获得2 mA/cm²的光电流,纯BiVO需要560 mV的过电位,而异质结需要250 mV。光电流的增加源于从BiVO到CsPtI的电荷分离效率的提高以及后者提供的互补吸收。