Florian Camilo, Fischer Daniel, Freiberg Katharina, Duwe Matthias, Sahre Mario, Schneider Stefan, Hertwig Andreas, Krüger Jörg, Rettenmayr Markus, Beck Uwe, Undisz Andreas, Bonse Jörn
Bundesanstalt für Materialforschung und -prüfung (BAM), Unter den Eichen 87, D-12205 Berlin, Germany.
Princeton Institute for the Science and Technology of Materials (PRISM), Princeton University, 70 Prospect Avenue, Princeton, NJ 08540, USA.
Materials (Basel). 2021 Mar 27;14(7):1651. doi: 10.3390/ma14071651.
Superficial amorphization and re-crystallization of silicon in <111> and <100> orientation after irradiation by femtosecond laser pulses (790 nm, 30 fs) are studied using optical imaging and transmission electron microscopy. Spectroscopic imaging ellipsometry (SIE) allows fast data acquisition at multiple wavelengths and provides experimental data for calculating nanometric amorphous layer thickness profiles with micrometric lateral resolution based on a thin-film layer model. For a radially Gaussian laser beam and at moderate peak fluences above the melting and below the ablation thresholds, laterally parabolic amorphous layer profiles with maximum thicknesses of several tens of nanometers were quantitatively attained. The accuracy of the calculations is verified experimentally by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (STEM-EDX). Along with topographic information obtained by atomic force microscopy (AFM), a comprehensive picture of the superficial re-solidification of silicon after local melting by femtosecond laser pulses is drawn.
利用光学成像和透射电子显微镜研究了飞秒激光脉冲(790nm,30fs)辐照后<111>和<100>取向硅的表面非晶化和再结晶。光谱成像椭偏仪(SIE)能够在多个波长下快速采集数据,并基于薄膜层模型提供用于计算具有微米级横向分辨率的纳米非晶层厚度分布的实验数据。对于径向高斯激光束,在高于熔化阈值且低于烧蚀阈值的中等峰值通量下,定量获得了最大厚度为几十纳米的横向抛物线形非晶层分布。通过高分辨率透射电子显微镜(HRTEM)和能量色散X射线光谱(STEM-EDX)对计算的准确性进行了实验验证。结合原子力显微镜(AFM)获得的形貌信息,描绘了飞秒激光脉冲局部熔化后硅表面再凝固的全貌。