Jarutis Vygandas, Paipulas Domas, Jukna Vytautas
Laser Research Center, Vilnius University, Sauletekio Avenue 10, LT-10223 Vilnius, Lithuania.
Materials (Basel). 2023 Mar 9;16(6):2205. doi: 10.3390/ma16062205.
Superficial modifications on silicon wafers produced by single-shot focused femtosecond laser irradiation having a 1030 nm wavelength and 300 fs pulse duration were experimentally and theoretically analyzed. The laser fluence window when the amorphous silicon phase develops, resulting in a ring-like modification shape, was experimentally estimated to be between 0.26 J/cm2 and 0.40 J/cm2 and was independent of the silicon dopant type and laser focusing conditions; however, the window was narrower when compared to results reported for shorter pulse durations. In addition, we present a simplified numerical model that can explain and predict the formation of these patterns based on the caloric coefficients of silicon and the energy distribution of the deposited material.
对通过单次聚焦飞秒激光辐照产生的硅片表面改性进行了实验和理论分析，该激光波长为1030 nm，脉冲持续时间为300 fs。实验估计，当非晶硅相形成并产生环状改性形状时的激光能量密度窗口在0.26 J/cm²至0.40 J/cm²之间，且与硅掺杂剂类型和激光聚焦条件无关；然而，与报道的较短脉冲持续时间的结果相比，该窗口更窄。此外，我们提出了一个简化的数值模型，该模型可以基于硅的热系数和沉积材料的能量分布来解释和预测这些图案的形成。
