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用于亚纳米级器件的二维非晶态固体。

2D amorphous solids for sub-nanometer scale devices.

作者信息

Jang Hyeonseo, Kim Hyeonju, Kim Gayoon, Cho Suyeon, Yang Heejun

机构信息

Division of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul, 03760, Korea.

Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea.

出版信息

Nano Converg. 2024 Nov 24;11(1):46. doi: 10.1186/s40580-024-00453-2.

Abstract

Amorphous solids are a type of condensed matter characterized by the absence of long-range order in their lattice structure. However, they still exhibit short- or medium-range order, which contributes to their versatile local and global electronic and chemical properties. Recently, 2D amorphous solids have gained attention for their exceptional mechanical and electronic features, which are unattainable in conventional crystalline materials. This review highlights the physical properties of ultrathin 2D amorphous solids, which are formed through covalent bonding and feature polyhedron structures with shared edges and corners. Two notable examples of 2D amorphous solids include honeycomb-structured nanosheets with mixed hybrid orbitals and layered materials with reduced coordination numbers of the elements. We provide an in-depth discussion of (1) the phase transition between crystalline and amorphous phases in 2D solids, (2) advanced synthetic methods for producing high-quality amorphous films with precise thickness control, and (3) the potential applications of sub-nanometer scale 2D amorphous solids. Lastly, we explore their potential to revolutionize the design of highly versatile electronic devices at sub-nanometer scales.

摘要

非晶态固体是一种凝聚态物质,其晶格结构缺乏长程有序性。然而,它们仍然表现出短程或中程有序性,这有助于其具有多样的局部和全局电子及化学性质。最近,二维非晶态固体因其优异的机械和电子特性而受到关注,这些特性是传统晶体材料所无法实现的。本综述重点介绍了超薄二维非晶态固体的物理性质,它们通过共价键形成,具有共享边和角的多面体结构。二维非晶态固体的两个显著例子包括具有混合杂化轨道的蜂窝状纳米片和元素配位数降低的层状材料。我们深入讨论了:(1)二维固体中晶态和非晶态之间的相变;(2)用于制备具有精确厚度控制的高质量非晶薄膜的先进合成方法;(3)亚纳米尺度二维非晶态固体的潜在应用。最后,我们探讨了它们在亚纳米尺度上彻底改变高度通用电子器件设计的潜力。

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