• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利：CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法，用中文像聊天一样搜索，搜遍4000万医学文献。AI智能推荐，让科研检索更轻松。

立即免费搜索

文件翻译

保留排版，准确专业，支持PDF/Word/PPT等文件格式，支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述，25分钟生成高质量综述，智能提取关键信息，辅助科研写作。

立即免费体验

基于CMOS技术的微机电三轴磁场传感器的设计与测量

Design and Measurement of Microelectromechanical Three-Axis Magnetic Field Sensors Based on the CMOS Technique.

作者信息

Wu Chi-Han, Hsu Cheng-Chih, Tsai Yao-Chuan, Lee Chi-Yuan, Dai Ching-Liang

机构信息

Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, Taiwan.

Department of Electro-Optical Engineering, National United University, Miaoli 360, Taiwan.

出版信息

Micromachines (Basel). 2023 May 12;14(5):1038. doi: 10.3390/mi14051038.

DOI:10.3390/mi14051038
PMID:37241663
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10222463/
Abstract

The design, fabrication, and measurement of a microelectromechanical system (MEMS) three-axis magnetic field sensor (MFS) based on the commercial complementary metal oxide semiconductor (CMOS) process are investigated. The MFS is a magnetic transistor type. The performance of the MFS was analyzed employing the semiconductor simulation software, Sentaurus TCAD. In order to decrease the cross-sensitivity of the three-axis MFS, the structure of the MFS is planed to accommodate two independent sensing components, a z-MFS utilized to sense magnetic field (M-F) in the z-direction and a y/x-MFS composed of a y-MFS and a x-MFS to be utilized to sense M-F in the y- and x-directions. The z-MFS incorporates four additional collectors to increase its sensitivity. The commercial 1P6M 0.18 μm CMOS process of the Taiwan Semiconductor Manufacturing Company (TSMC) is utilized to manufacture the MFS. Experiments depict that the MFS has a low cross-sensitivity of less than 3%. The sensitivities of z-, y-, and x-MFS are 237 mV/T, 485 mV/T, and 484 mV/T, respectively.

摘要

研究了基于商用互补金属氧化物半导体（CMOS）工艺的微机电系统（MEMS）三轴磁场传感器（MFS）的设计、制造和测量。该MFS为磁晶体管类型。使用半导体仿真软件Sentaurus TCAD对MFS的性能进行了分析。为了降低三轴MFS的交叉灵敏度，对MFS的结构进行了规划，以容纳两个独立的传感组件，一个用于感测z方向磁场（M-F）的z-MFS，以及一个由y-MFS和x-MFS组成的y/x-MFS，用于感测y方向和x方向的M-F。z-MFS包含四个额外的集电极以提高其灵敏度。采用台湾积体电路制造股份有限公司（TSMC）的商用1P6M 0.18μm CMOS工艺制造MFS。实验表明，该MFS具有低于3%的低交叉灵敏度。z-MFS、y-MFS和x-MFS的灵敏度分别为237 mV/T、485 mV/T和484 mV/T。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/c2d7a4ac3e42/micromachines-14-01038-g018.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/d82280dc1af5/micromachines-14-01038-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/f2778e04a835/micromachines-14-01038-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/4e89e4c64b35/micromachines-14-01038-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/d6bda5f71881/micromachines-14-01038-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/6cb3107b2361/micromachines-14-01038-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/3f75f90f4ac4/micromachines-14-01038-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/38043d6683b2/micromachines-14-01038-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/0c62c665efd6/micromachines-14-01038-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/d880235b396c/micromachines-14-01038-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/55bd6abd9726/micromachines-14-01038-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/fd69828bbeec/micromachines-14-01038-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/6fa2e6c2d97a/micromachines-14-01038-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/9a26d05dc7e9/micromachines-14-01038-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/2033c1646bcb/micromachines-14-01038-g014.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/a190bf849aea/micromachines-14-01038-g015.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/c7f1be3c6db9/micromachines-14-01038-g016.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/7266bc41f4c4/micromachines-14-01038-g017.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/c2d7a4ac3e42/micromachines-14-01038-g018.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/d82280dc1af5/micromachines-14-01038-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/f2778e04a835/micromachines-14-01038-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/4e89e4c64b35/micromachines-14-01038-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/d6bda5f71881/micromachines-14-01038-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/6cb3107b2361/micromachines-14-01038-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/3f75f90f4ac4/micromachines-14-01038-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/38043d6683b2/micromachines-14-01038-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/0c62c665efd6/micromachines-14-01038-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/d880235b396c/micromachines-14-01038-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/55bd6abd9726/micromachines-14-01038-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/fd69828bbeec/micromachines-14-01038-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/6fa2e6c2d97a/micromachines-14-01038-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/9a26d05dc7e9/micromachines-14-01038-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/2033c1646bcb/micromachines-14-01038-g014.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/a190bf849aea/micromachines-14-01038-g015.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/c7f1be3c6db9/micromachines-14-01038-g016.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/7266bc41f4c4/micromachines-14-01038-g017.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d52/10222463/c2d7a4ac3e42/micromachines-14-01038-g018.jpg

相似文献

1
Design and Measurement of Microelectromechanical Three-Axis Magnetic Field Sensors Based on the CMOS Technique.基于CMOS技术的微机电三轴磁场传感器的设计与测量
Micromachines (Basel). 2023 May 12;14(5):1038. doi: 10.3390/mi14051038.
2
Magnetic Micro Sensors with Two Magnetic Field Effect Transistors Fabricated Using the Commercial Complementary Metal Oxide Semiconductor Process.采用商用互补金属氧化物半导体工艺制造的具有两个磁场效应晶体管的磁性微传感器。
Sensors (Basel). 2020 Aug 21;20(17):4731. doi: 10.3390/s20174731.
3
Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology.采用标准 180nmCMOS 技术的三轴磁传感器的制造与特性分析。
Sensors (Basel). 2021 Oct 20;21(21):6953. doi: 10.3390/s21216953.
4
Micro Magnetic Field Sensors Manufactured Using a Standard 0.18-μm CMOS Process.采用标准0.18微米互补金属氧化物半导体工艺制造的微磁场传感器。
Micromachines (Basel). 2018 Aug 7;9(8):393. doi: 10.3390/mi9080393.
5
Modeling and manufacturing of a micromachined magnetic sensor using the CMOS process without any post-process.采用CMOS工艺且无需任何后处理的微机械磁传感器的建模与制造。
Sensors (Basel). 2014 Apr 11;14(4):6722-33. doi: 10.3390/s140406722.
6
Fabrication and Characterization of Monolithic Integrated Three-Axis Acceleration/Pressure/Magnetic Field Sensors.单片集成三轴加速度/压力/磁场传感器的制造与特性分析
Micromachines (Basel). 2024 Mar 19;15(3):412. doi: 10.3390/mi15030412.
7
Fabrication and Characterization of a CMOS-MEMS Humidity Sensor.一种CMOS-MEMS湿度传感器的制造与表征
Sensors (Basel). 2015 Jul 10;15(7):16674-87. doi: 10.3390/s150716674.
8
Research on a CMOS-MEMS Infrared Sensor with Reduced Graphene Oxide.基于还原氧化石墨烯的CMOS-MEMS红外传感器研究。
Sensors (Basel). 2020 Jul 18;20(14):4007. doi: 10.3390/s20144007.
9
Multi-Function Microelectromechanical Systems Implementation with an ASIC Compatible CMOS 0.18 μm Process.采用与ASIC兼容的0.18μm CMOS工艺实现的多功能微机电系统
Micromachines (Basel). 2021 Mar 17;12(3):314. doi: 10.3390/mi12030314.
10
Fabrication and characterization of CMOS-MEMS magnetic microsensors.CMOS-MEMS 磁微传感器的制作与特性研究。
Sensors (Basel). 2013 Oct 29;13(11):14728-39. doi: 10.3390/s131114728.

本文引用的文献

1
Selective Sensing of Mixtures of Gases with CMOS-SOI-MEMS Sensor Dubbed GMOS.采用名为GMOS的CMOS-SOI-MEMS传感器对混合气体进行选择性传感。
Micromachines (Basel). 2023 Feb 4;14(2):390. doi: 10.3390/mi14020390.
2
Design and Development of a MOEMS Accelerometer Using SOI Technology.基于绝缘体上硅（SOI）技术的微机电系统（MOEMS）加速度计的设计与开发
Micromachines (Basel). 2023 Jan 16;14(1):231. doi: 10.3390/mi14010231.
3
High Frequency MEMS Capacitive Mirror for Space Applications.用于太空应用的高频微机电系统电容式反射镜。
Micromachines (Basel). 2023 Jan 8;14(1):158. doi: 10.3390/mi14010158.
4
An SOI-Structured Piezoresistive Differential Pressure Sensor with High Performance.一种具有高性能的SOI结构压阻式差压传感器。
Micromachines (Basel). 2022 Dec 17;13(12):2250. doi: 10.3390/mi13122250.
5
Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process.各种热敏电阻对采用CMOS工艺制造的电阻式微测辐射热计性能的影响。
Micromachines (Basel). 2022 Oct 30;13(11):1869. doi: 10.3390/mi13111869.
6
Design and Fabrication of Millimeter-Wave Frequency-Tunable Metamaterial Absorber Using MEMS Cantilever Actuators.基于微机电系统（MEMS）悬臂梁致动器的毫米波频率可调超材料吸波器的设计与制造
Micromachines (Basel). 2022 Aug 20;13(8):1354. doi: 10.3390/mi13081354.
7
A Thermopile Infrared Sensor Array Pixel Monolithically Integrated with an NMOS Switch.一种与NMOS开关单片集成的热电堆红外传感器阵列像素。
Micromachines (Basel). 2022 Feb 4;13(2):258. doi: 10.3390/mi13020258.
8
Realization of Three-Dimensionally MEMS Stacked Comb Structures for Microactuators Using Low-Temperature Multi-Wafer Bonding with Self-Alignment Techniques in CMOS-Compatible Processes.在CMOS兼容工艺中使用低温多晶圆键合和自对准技术实现用于微致动器的三维MEMS堆叠梳状结构。
Micromachines (Basel). 2021 Nov 29;12(12):1481. doi: 10.3390/mi12121481.
9
Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology.采用标准 180nmCMOS 技术的三轴磁传感器的制造与特性分析。
Sensors (Basel). 2021 Oct 20;21(21):6953. doi: 10.3390/s21216953.
10
Development and Performance Evaluation of Wearable Respiratory Self-Training System Using Patch Type Magnetic Sensor.基于贴片式磁传感器的可穿戴呼吸自我训练系统的开发与性能评估
Front Oncol. 2021 Aug 3;11:680147. doi: 10.3389/fonc.2021.680147. eCollection 2021.