基于CMOS技术的微机电三轴磁场传感器的设计与测量

Design and Measurement of Microelectromechanical Three-Axis Magnetic Field Sensors Based on the CMOS Technique.

作者信息

Wu Chi-Han, Hsu Cheng-Chih, Tsai Yao-Chuan, Lee Chi-Yuan, Dai Ching-Liang

机构信息

Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, Taiwan.

Department of Electro-Optical Engineering, National United University, Miaoli 360, Taiwan.

出版信息

Micromachines (Basel). 2023 May 12;14(5):1038. doi: 10.3390/mi14051038.

DOI:10.3390/mi14051038

PMID:37241663

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10222463/

Abstract

The design, fabrication, and measurement of a microelectromechanical system (MEMS) three-axis magnetic field sensor (MFS) based on the commercial complementary metal oxide semiconductor (CMOS) process are investigated. The MFS is a magnetic transistor type. The performance of the MFS was analyzed employing the semiconductor simulation software, Sentaurus TCAD. In order to decrease the cross-sensitivity of the three-axis MFS, the structure of the MFS is planed to accommodate two independent sensing components, a z-MFS utilized to sense magnetic field (M-F) in the z-direction and a y/x-MFS composed of a y-MFS and a x-MFS to be utilized to sense M-F in the y- and x-directions. The z-MFS incorporates four additional collectors to increase its sensitivity. The commercial 1P6M 0.18 μm CMOS process of the Taiwan Semiconductor Manufacturing Company (TSMC) is utilized to manufacture the MFS. Experiments depict that the MFS has a low cross-sensitivity of less than 3%. The sensitivities of z-, y-, and x-MFS are 237 mV/T, 485 mV/T, and 484 mV/T, respectively.

摘要

研究了基于商用互补金属氧化物半导体（CMOS）工艺的微机电系统（MEMS）三轴磁场传感器（MFS）的设计、制造和测量。该MFS为磁晶体管类型。使用半导体仿真软件Sentaurus TCAD对MFS的性能进行了分析。为了降低三轴MFS的交叉灵敏度，对MFS的结构进行了规划，以容纳两个独立的传感组件，一个用于感测z方向磁场（M-F）的z-MFS，以及一个由y-MFS和x-MFS组成的y/x-MFS，用于感测y方向和x方向的M-F。z-MFS包含四个额外的集电极以提高其灵敏度。采用台湾积体电路制造股份有限公司（TSMC）的商用1P6M 0.18μm CMOS工艺制造MFS。实验表明，该MFS具有低于3%的低交叉灵敏度。z-MFS、y-MFS和x-MFS的灵敏度分别为237 mV/T、485 mV/T和484 mV/T。