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应变驱动的YPdBi薄膜中拓扑非平凡性的出现。

Strain driven emergence of topological non-triviality in YPdBi thin films.

作者信息

Bhardwaj Vishal, Bhattacharya Anupam, Srivastava Shivangi, Khovaylo Vladimir V, Sannigrahi Jhuma, Banerjee Niladri, Mani Brajesh K, Chatterjee Ratnamala

机构信息

Department of Physics, Indian Institute of Technology Delhi, New Delhi, India.

Department of Mechanical Engineering, Indian Institute of Technology Delhi, New Delhi, India.

出版信息

Sci Rep. 2021 Apr 6;11(1):7535. doi: 10.1038/s41598-021-86936-2.

Abstract

Half-Heusler compounds exhibit a remarkable variety of emergent properties such as heavy-fermion behaviour, unconventional superconductivity and magnetism. Several of these compounds have been predicted to host topologically non-trivial electronic structures. Remarkably, recent theoretical studies have indicated the possibility to induce non-trivial topological surface states in an otherwise trivial half-Heusler system by strain engineering. Here, using magneto-transport measurements and first principles DFT-based simulations, we demonstrate topological surface states on strained [110] oriented thin films of YPdBi grown on (100) MgO. These topological surface states arise in an otherwise trivial semi-metal purely driven by strain. Furthermore, we observe the onset of superconductivity in these strained films highlighting the possibility of engineering a topological superconducting state. Our results demonstrate the critical role played by strain in engineering novel topological states in thin film systems for developing next-generation spintronic devices.

摘要

半赫斯勒化合物展现出多种显著的涌现特性,如重费米子行为、非常规超导性和磁性。其中一些化合物已被预测具有拓扑非平凡的电子结构。值得注意的是,最近的理论研究表明,通过应变工程有可能在原本平凡的半赫斯勒体系中诱导出非平凡的拓扑表面态。在此,我们利用磁输运测量和基于第一性原理密度泛函理论的模拟,证明了在(100)MgO上生长的应变[110]取向的YPdBi薄膜上存在拓扑表面态。这些拓扑表面态出现在一个原本平凡的半金属中,完全由应变驱动。此外,我们在这些应变薄膜中观察到超导性的出现,突出了设计拓扑超导态的可能性。我们的结果证明了应变在薄膜系统中设计新型拓扑态以开发下一代自旋电子器件方面所起的关键作用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5b56/8024271/1033303ae87e/41598_2021_86936_Fig1_HTML.jpg

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