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微通道板上AZO导电层的设计

The Design of the AZO Conductive Layer on Microchannel Plate.

作者信息

Wang Yuman, Liu Shulin, Yan Baojun, Qi Ming, Wen Kaile, Zhang Binting, Gu Jianyu, Yao Wenjing

机构信息

School of Physics, Nanjing University, Nanjing, 210093, China.

State Key Laboratory of Particle Detection and Electronics, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China.

出版信息

Nanoscale Res Lett. 2021 Apr 7;16(1):55. doi: 10.1186/s11671-021-03515-0.

DOI:10.1186/s11671-021-03515-0
PMID:33825978
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8026805/
Abstract

When the resistivity of the AZO conductive layer is within the MCP resistance requirement, the interval of the Zn content is very narrow (70-73%) and difficult to control. Aiming at the characteristics of the AZO conductive layer on the microchannel plate, an algorithm is designed to adjust the ratio of the conductive material ZnO and the high resistance material Al2O3. We put forward the concept of the working resistance of the MCP (i.e., the resistance during the electron avalanche in the microchannel). The working resistance of AZO-ALD-MCP (Al2O3/ZnO atomic layer deposition microchannel plate) was measured for the first time by the MCP resistance test system. In comparison with the conventional MCP, we found that the resistance of AZO-ALD-MCP in working state and non-working state is very different, and as the voltage increases, the working resistance significantly decreases. Therefore, we proposed a set of analytical methods for the conductive layer. We also proposed to adjust the ratio of the conductive material of the ALD-MCP conductive layer to the high-resistance material under the working resistance condition, and successfully prepared high-gain AZO-ALD-MCP. This design opens the way for finding better materials for the conductive layer of ALD-MCP to improve the performance of MCP.

摘要

当AZO导电层的电阻率在微通道板（MCP）的电阻要求范围内时，锌含量的区间非常窄（70 - 73%）且难以控制。针对微通道板上AZO导电层的特性，设计了一种算法来调整导电材料氧化锌（ZnO）与高电阻材料氧化铝（Al₂O₃）的比例。我们提出了微通道板工作电阻的概念（即微通道中电子雪崩期间的电阻）。首次通过MCP电阻测试系统测量了AZO - ALD - MCP（Al₂O₃/ZnO原子层沉积微通道板）的工作电阻。与传统微通道板相比，我们发现AZO - ALD - MCP在工作状态和非工作状态下的电阻差异很大，并且随着电压升高，工作电阻显著降低。因此，我们提出了一套针对导电层的分析方法。我们还提出在工作电阻条件下调整ALD - MCP导电层的导电材料与高电阻材料的比例，并成功制备出高增益的AZO - ALD - MCP。该设计为寻找用于ALD - MCP导电层的更好材料以提高MCP性能开辟了道路。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c87c/8026805/8342fa841b12/11671_2021_3515_Fig12_HTML.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c87c/8026805/8342fa841b12/11671_2021_3515_Fig12_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c87c/8026805/8db9d0be7d4f/11671_2021_3515_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c87c/8026805/4b4eb94c9de2/11671_2021_3515_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c87c/8026805/fbc04283d69e/11671_2021_3515_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c87c/8026805/8b8e8f7ba248/11671_2021_3515_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c87c/8026805/b0639a171f33/11671_2021_3515_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c87c/8026805/68b341918951/11671_2021_3515_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c87c/8026805/04a02d5f1a4d/11671_2021_3515_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c87c/8026805/257b3ff26cd5/11671_2021_3515_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c87c/8026805/6283af636853/11671_2021_3515_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c87c/8026805/af4e562a0447/11671_2021_3515_Fig10_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c87c/8026805/a168eb2d8c3c/11671_2021_3515_Fig11_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c87c/8026805/8342fa841b12/11671_2021_3515_Fig12_HTML.jpg

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引用本文的文献

1
Correction to: The Design of the AZO Conductive Layer on Microchannel Plate.对《微通道板上AZO导电层的设计》的修正
Nanoscale Res Lett. 2021 Jun 9;16(1):103. doi: 10.1186/s11671-021-03556-5.