Boron-toxicity induced changes in cell wall components, boron forms, and antioxidant defense system in rice seedlings.

Boron (B) is an indispensable micronutrient that ensures the optimal growth and productivity of the plant. However, excessive use of B fertilizers results in B toxicity which is relatively difficult to correct as compared to B deficiency. Moreover, underlying mechanisms of B toxicity induced changes in cell wall components and the association of B forms in the appearance of toxicity symptoms in rice seedlings are lacking. Therefore, the present investigation was carried out on rice seedlings by employing different concentrations of B (CK, B1; 100 µM, B2; 300 µM, and B3; 400 µM). The results showed that a high concentration of B caused inhibition of root and shoot growth with noticeable signs of stress on leaves in terms of chlorophyll contents. In addition, B toxicity caused oxidative stress and lipid oxidation of membranes. The higher concentrations of B were accumulated in the leaves than roots. In the roots and leaves, more than 80% B was adsorbed on the cell wall. In the treatment of B3, the free form of B was higher than the bound-B. Fourier Transform Infrared Spectrometer (FTIR) results showed that higher concentrations led to variation in functional groups of cell walls of leaves. The results of this investigation showed that B stress-induced inhibition of growth might be linked with higher B uptake in the upper parts, oxidative damages, and forms of B may play important role in the chlorosis. The findings of the study may help to understand the mechanisms of B stress-induced growth inhibition in rice seedlings.