Sun Luzhao, Wang Zihao, Wang Yuechen, Zhao Liang, Li Yanglizhi, Chen Buhang, Huang Shenghong, Zhang Shishu, Wang Wendong, Pei Ding, Fang Hongwei, Zhong Shan, Liu Haiyang, Zhang Jincan, Tong Lianming, Chen Yulin, Li Zhenyu, Rümmeli Mark H, Novoselov Kostya S, Peng Hailin, Lin Li, Liu Zhongfan
Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China.
Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, People's Republic of China.
Nat Commun. 2021 Apr 22;12(1):2391. doi: 10.1038/s41467-021-22533-1.
Twisted bilayer graphene (tBLG) has recently attracted growing interest due to its unique twist-angle-dependent electronic properties. The preparation of high-quality large-area bilayer graphene with rich rotation angles would be important for the investigation of angle-dependent physics and applications, which, however, is still challenging. Here, we demonstrate a chemical vapor deposition (CVD) approach for growing high-quality tBLG using a hetero-site nucleation strategy, which enables the nucleation of the second layer at a different site from that of the first layer. The fraction of tBLGs in bilayer graphene domains with twist angles ranging from 0° to 30° was found to be improved to 88%, which is significantly higher than those reported previously. The hetero-site nucleation behavior was carefully investigated using an isotope-labeling technique. Furthermore, the clear Moiré patterns and ultrahigh room-temperature carrier mobility of 68,000 cm V s confirmed the high crystalline quality of our tBLG. Our study opens an avenue for the controllable growth of tBLGs for both fundamental research and practical applications.
扭曲双层石墨烯（tBLG）因其独特的与扭曲角相关的电子特性，近来引起了越来越多的关注。制备具有丰富旋转角的高质量大面积双层石墨烯，对于研究与角度相关的物理性质及应用而言至关重要，然而，这仍然具有挑战性。在此，我们展示了一种化学气相沉积（CVD）方法，通过异质位点成核策略来生长高质量的tBLG，该策略能使第二层在与第一层不同的位点成核。在扭曲角范围为0°至30°的双层石墨烯畴中，tBLG的占比提高到了88%，这显著高于先前报道的比例。利用同位素标记技术仔细研究了异质位点成核行为。此外，清晰的莫尔条纹图案以及68,000 cm² V⁻¹ s⁻¹的超高室温载流子迁移率证实了我们所制备的tBLG具有高晶体质量。我们的研究为基础研究和实际应用中tBLG的可控生长开辟了一条途径。
