Bukke Ravindra Naik, Jang Jin
Advanced Display Research Center, Department of Information Display, Kyung Hee University Hoegi-dong, Dongdaemun-gu Seoul 130-701 South Korea
RSC Adv. 2021 Oct 25;11(54):34392-34401. doi: 10.1039/d1ra04787f. eCollection 2021 Oct 18.
The performance of metal-oxide thin-film transistors (TFTs) should be further improved for the applications of next-generation displays. Here, the developments of gel-derived gallium-indium-tin-zinc oxide (GITZO) for n-channel and copper-gallium-tin-sulfide oxide (CGTSO) for p-channel TFTs are demonstrated. The a-GITZO film by gel-based precursor gives an excellent interface with ZrO compared to the GITZO deposited using pristine or purified precursor. The gel-derived GITZO TFT exhibits the saturation mobility ( ) of 28.6 ± 2.15 cm V s, three-fold higher than the pristine one, and excellent bias stability. The boost in GITZO TFT performances is due to the purity of the metal oxide material and higher film density with smooth surface morphology. In addition, the field-effect mobility ( ) of the p-channel copper-tin-sulfide-gallium oxide (CGTSO) TFT could be increased from 1.71 to 4.25 cm V s using a gel-derived precursor solution. Therefore, these results demonstrate that the gel-derived metal-oxide precursor by the solution process is a promising one for the high performance of the TFT backplane.
对于下一代显示器的应用而言，金属氧化物薄膜晶体管（TFT）的性能仍需进一步提升。在此，展示了用于n沟道的凝胶衍生镓铟锡锌氧化物（GITZO）和用于p沟道TFT的铜镓锡硫氧化物（CGTSO）的进展。与使用原始或纯化前驱体沉积的GITZO相比，基于凝胶的前驱体制备的非晶GITZO薄膜与ZrO具有优异的界面。凝胶衍生的GITZO TFT表现出28.6±2.15 cm² V⁻¹ s⁻¹的饱和迁移率（μsat），比原始的高出三倍，并且具有出色的偏置稳定性。GITZO TFT性能的提升归因于金属氧化物材料的纯度以及具有光滑表面形态的更高薄膜密度。此外，使用凝胶衍生的前驱体溶液，p沟道铜锡硫镓氧化物（CGTSO）TFT的场效应迁移率（μFE）可从1.71提高到4.25 cm² V⁻¹ s⁻¹。因此，这些结果表明，通过溶液法制备的凝胶衍生金属氧化物前驱体对于TFT背板的高性能而言是很有前景的。
