Zhang Ting, Liu He, Gao Fei, Xu Gang, Wang Ke, Zhang Xin, Cao Gang, Wang Ting, Zhang Jianjun, Hu Xuedong, Li Hai-Ou, Guo Guo-Ping
CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
Nano Lett. 2021 May 12;21(9):3835-3842. doi: 10.1021/acs.nanolett.1c00263. Epub 2021 Apr 29.
Holes in nanowires have drawn significant attention in recent years because of the strong spin-orbit interaction, which plays an important role in constructing Majorana zero modes and manipulating spin-orbit qubits. Here, from the strongly anisotropic leakage current in the spin blockade regime for a double dot, we extract the full -tensor and find that the spin-orbit field is in plane with an azimuthal angle of 59° to the axis of the nanowire. The direction of the spin-orbit field indicates a strong spin-orbit interaction along the nanowire, which may have originated from the interface inversion asymmetry in Ge hut wires. We also demonstrate two different spin relaxation mechanisms for the holes in the Ge hut wire double dot: spin-flip co-tunneling to the leads, and spin-orbit interaction within the double dot. These results help establish feasibility of a Ge-based quantum processor.
近年来，由于强自旋轨道相互作用，纳米线中的空穴引起了极大关注，这种相互作用在构建马约拉纳零模和操纵自旋轨道量子比特方面起着重要作用。在此，从双量子点自旋阻塞区域中的强各向异性漏电流，我们提取出全张量，并发现自旋轨道场在平面内，与纳米线轴的方位角为59°。自旋轨道场的方向表明沿纳米线存在强自旋轨道相互作用，这可能源于锗量子线中的界面反演不对称性。我们还展示了锗量子线双量子点中空穴的两种不同自旋弛豫机制：自旋翻转共隧穿到引线，以及双量子点内的自旋轨道相互作用。这些结果有助于确立基于锗的量子处理器的可行性。
