School of Physics, ‡Australian National Fabrication Facility, and §Centre of Excellence for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales , Sydney, New South Wales 2052, Australia.
Nano Lett. 2015 Nov 11;15(11):7314-8. doi: 10.1021/acs.nanolett.5b02561. Epub 2015 Oct 12.
In this work, we study hole transport in a planar silicon metal-oxide-semiconductor based double quantum dot. We demonstrate Pauli spin blockade in the few hole regime and map the spin relaxation induced leakage current as a function of interdot level spacing and magnetic field. With varied interdot tunnel coupling, we can identify different dominant spin relaxation mechanisms. Application of a strong out-of-plane magnetic field causes an avoided singlet-triplet level crossing, from which the heavy hole g-factor ~0.93 and the strength of spin-orbit interaction ~110 μeV can be obtained. The demonstrated strong spin-orbit interaction of heavy holes promises fast local spin manipulation using only electric fields, which is of great interest for quantum information processing.
在这项工作中，我们研究了基于平面硅金属氧化物半导体的双量子点中的空穴输运。我们在少数空穴情况下证明了 Pauli 自旋阻塞，并绘制了自旋弛豫诱导的漏电流作为双点间能级间隔和磁场的函数。通过改变双点间隧道耦合，我们可以确定不同的主要自旋弛豫机制。施加强的面外磁场会导致避免的单重态-三重态能级交叉，从中可以得到重空穴 g 因子约 0.93 和自旋轨道相互作用强度约 110 μeV。所证明的重空穴强自旋轨道相互作用有望仅使用电场进行快速局部自旋操控，这对于量子信息处理具有重要意义。
