Liu He, Wang Ke, Gao Fei, Leng Jin, Liu Yang, Zhou Yu-Chen, Cao Gang, Wang Ting, Zhang Jianjun, Huang Peihao, Li Hai-Ou, Guo Guo-Ping
CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
Nano Lett. 2023 May 10;23(9):3810-3817. doi: 10.1021/acs.nanolett.3c00213. Epub 2023 Apr 26.
Hole spin qubits based on germanium (Ge) have strong tunable spin-orbit interaction (SOI) and ultrafast qubit operation speed. Here we report that the Rabi frequency () of a hole spin qubit in a Ge hut wire (HW) double quantum dot (DQD) is electrically tuned through the detuning energy (ϵ) and middle gate voltage (). gradually decreases with increasing ϵ; on the contrary, is positively correlated with . We attribute our results to the change of electric field on SOI and the contribution of the excited state in quantum dots to . We further demonstrate an ultrafast exceeding 1.2 GHz, which indicates the strong SOI in our device. The discovery of an ultrafast and electrically tunable in a hole spin qubit has potential applications in semiconductor quantum computing.
基于锗(Ge)的空穴自旋量子比特具有强大的可调谐自旋轨道相互作用(SOI)和超快的量子比特操作速度。在此,我们报告了锗量子线(HW)双量子点(DQD)中空穴自旋量子比特的拉比频率()可通过失谐能量(ϵ)和中间栅极电压()进行电调谐。随着ϵ的增加逐渐减小;相反,与呈正相关。我们将结果归因于SOI上电场的变化以及量子点中激发态对的贡献。我们进一步证明了超过1.2 GHz的超快,这表明我们的器件中存在强大的SOI。在空穴自旋量子比特中发现超快且电可调的在半导体量子计算中具有潜在应用。