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了解SrLaLiTeMnO钙钛矿的结构、光学和介电特性。

Understanding the structural, optical, and dielectric characteristics of SrLaLiTeMnO perovskites.

作者信息

Halizan M Z M, Mohamed Z, Yahya A K

机构信息

Faculty of Applied Sciences, Universiti Teknologi MARA, 40450, Shah Alam, , Selangor, Malaysia.

出版信息

Sci Rep. 2021 May 7;11(1):9744. doi: 10.1038/s41598-021-89132-4.

DOI:10.1038/s41598-021-89132-4
PMID:33963258
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8105392/
Abstract

In electronic applications, good dielectric permittivity material has huge potential in the capacitive energy storage devices. Herein, in the present work the dielectric study of SrLaLiTeMnO (x = 0.02, 0.04, 0.06, 0.08, and 0.10) double perovskites has been studied and discussed. These compounds were prepared through solid-state reaction method. All of the prepared compounds were confirmed to crystallized in monoclinic structure of P2/n space symmetry with better crystallization when dopant concentrations increased until x = 0.08. The formation of Li-O-Te/Mn bonds in octahedral structures in all compounds were confirmed in this study. The existence of peaks at specific wavenumbers indicated vibrations of B-site cations' bonds. When dopant amounts were increased from x = 0.02 to x = 0.08, there was an increasing trend of grains sizes formation in the compounds. The discussions on effects of grain sizes towards dielectric properties were included in this paper. Other important results and discussions comprised of the significant effects of dopant on the optical band gap (E) and absorption frequencies of the compounds. The decreasing trend of E towards semiconductor range indicated the compounds' promising potentials for optoelectronic device application.

摘要

在电子应用中,良好的介电常数材料在电容式储能器件中具有巨大潜力。在此,在本工作中对SrLaLiTeMnO(x = 0.02、0.04、0.06、0.08和0.10)双钙钛矿的介电性能进行了研究和讨论。这些化合物通过固态反应法制备。所有制备的化合物均被证实结晶为P2/n空间对称的单斜结构,当掺杂剂浓度增加到x = 0.08时结晶性更好。本研究证实了所有化合物八面体结构中Li-O-Te/Mn键的形成。特定波数处峰的存在表明B位阳离子键的振动。当掺杂量从x = 0.02增加到x = 0.08时,化合物中晶粒尺寸形成呈增加趋势。本文包括了关于晶粒尺寸对介电性能影响的讨论。其他重要结果和讨论包括掺杂剂对化合物光学带隙(E)和吸收频率的显著影响。E向半导体范围的下降趋势表明这些化合物在光电器件应用方面具有广阔前景。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a39f/8105392/1f9726d5d66c/41598_2021_89132_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a39f/8105392/1f9726d5d66c/41598_2021_89132_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a39f/8105392/1f9726d5d66c/41598_2021_89132_Fig6_HTML.jpg

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