Faculty of Applied Sciences, Universiti Teknologi MARA, 40450, Shah Alam, Selangor, Malaysia.
Faculty of Applied Sciences, Universiti Teknologi MARA, Perak Branch, Tapah Campus, 35400, Tapah Road, Perak, Malaysia.
Sci Rep. 2023 Jan 23;13(1):1246. doi: 10.1038/s41598-023-28296-7.
In this paper, SrCaNiWO (x = 0.00, 0.02, 0.04, 0.06) were synthesized using a solid-state reaction method. The crystal structure, optical and dielectric properties of the compounds were examined using X-ray diffraction (XRD), scanning electron microscope (SEM) with energy dispersive (EDX) analysis, Ultraviolet-visible (UV-vis) diffuse reflectance spectroscopy and electrochemical impedance spectroscopy respectively. The Rietveld refinement of XRD confirmed that the compounds crystallized in a tetragonal structure with a space group I4/m. According to the SEM images, the grain sizes of the compounds decreased as the dopant increased. The UV-vis analysis revealed that the band gap energy of the compounds decreased from 3.17 eV to 3.13 eV as the amount of doping increased from x = 0.00 to x = 0.06. A dielectric characterization showed that the dielectric constant (ε') and dielectric loss (tan δ) for all compounds possessed a similar trend where it was higher in low-frequency area (~ 1 Hz) and dropped instantaneously with the enhancement of frequency up to 1 MHz until it reached constant values.
本文采用固态反应法合成了 SrCaNiWO(x=0.00、0.02、0.04、0.06)。通过 X 射线衍射(XRD)、扫描电子显微镜(SEM)与能谱分析(EDX)、紫外-可见漫反射光谱(UV-vis DRS)和电化学阻抗谱(EIS)分别对化合物的晶体结构、光学和介电性能进行了研究。XRD 的 Rietveld 精修证实了化合物为四方晶系,空间群为 I4/m。SEM 图像表明,随着掺杂量的增加,化合物的晶粒尺寸减小。UV-vis 分析表明,随着掺杂量从 x=0.00 增加到 x=0.06,化合物的带隙能从 3.17eV 降低到 3.13eV。介电特性表明,所有化合物的介电常数(ε')和介电损耗(tanδ)都具有相似的趋势,即在低频区(~1Hz)较高,随着频率的升高到 1MHz 时迅速下降,直到达到恒定值。