Feng Zhuoyun, Xiao Longfei, Luan Chongbian, Li Yangfan, Sha Huiru, Li Hongtao, Xu Xiangang
Appl Opt. 2021 Apr 10;60(11):3182-3186. doi: 10.1364/AO.420840.
Semi-insulating (SI) SiC photoconductive semiconductor switches were prepared using two compensation mechanisms: namely vanadium dopants compensation (4H- and 6H-SiC) and deep level defect compensation (4H-SiC). The bias voltage and current of the high-purity (HP) SI 4H-SiC photoconductive semiconductor switch (PCSS) with a channel length of 1 mm reached 24 kV and 364 A, respectively, and the minimum on-state resistance of approximately 1 Ω was triggered by laser illumination at a wavelength of 355 nm. The experimental results show that, in this case, the on-state characteristics of HP 4H-SiC PCSS are superior to those of the vanadium-doped(VD) 4H and 6H-SiC PCSS devices. HP 4H-SiC PCSS shows remarkable waveform consistency. Unlike for VD 4H and 6H-SiC PCSS, the current waveform of HP 4H-SiC PCSS exhibits a tailing phenomenon due to its longer carrier lifetime.
半绝缘（SI）碳化硅光电导半导体开关是利用两种补偿机制制备的：即钒掺杂补偿（4H-和6H-碳化硅）和深能级缺陷补偿（4H-碳化硅）。沟道长度为1mm的高纯度（HP）SI 4H-碳化硅光电导半导体开关（PCSS）的偏置电压和电流分别达到24kV和364A，并且在波长为355nm的激光照射下触发了约1Ω的最小导通电阻。实验结果表明，在这种情况下，HP 4H-碳化硅PCSS的导通特性优于钒掺杂（VD）4H和6H-碳化硅PCSS器件。HP 4H-碳化硅PCSS显示出显著的波形一致性。与VD 4H和6H-碳化硅PCSS不同，HP 4H-碳化硅PCSS的电流波形由于其较长的载流子寿命而呈现拖尾现象。
