Luan Chongbiao, Zhao Juan, Xiao Longfei, Yang Qingxi, Ma Xun, Li Hongtao
Key Laboratory of Pulsed Power, Institute of Fluid Physics, China Academy of Engineering Physics, P.O. Box 919-108, Mianyang 621900, China.
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
Rev Sci Instrum. 2020 Jan 1;91(1):014701. doi: 10.1063/1.5128450.
To study the damage and protection mechanism of an electromagnetic pulse to an electronic system, an all solid-state high-voltage pulse power with photoconductive semiconductor switch is developed, which is a component of the bounded wave electromagnetic pulse simulator. The output peak voltage of the prepared all solid-state pulsed power source was 74.5 kV, the risetime was 2.05 ns, and the pulse width was 22 ns. In addition, the peak voltage of the output pulse of the all solid-state pulsed power source could be regulated. The all solid-state electromagnetic pulse simulator developed in this work can generate an electromagnetic environment with a risetime of 2.2 ns and a pulse width of 23.5 ns.
为研究电磁脉冲对电子系统的损伤及防护机制，研制了一种采用光导半导体开关的全固态高压脉冲电源，它是有界波电磁脉冲模拟器的一个组成部分。所制备的全固态脉冲电源输出峰值电压为74.5 kV，上升时间为2.05 ns，脉冲宽度为22 ns。此外，全固态脉冲电源输出脉冲的峰值电压可以调节。本文研制的全固态电磁脉冲模拟器能够产生上升时间为2.2 ns、脉冲宽度为23.5 ns的电磁环境。
