Jiao Yajie, Hu Rongjing, Wang Qian, Fu Fengfu, Chen Lichan, Dong Yongqiang, Lin Zhenyu
MOE Key Laboratory for Analytical Science of Food Safety and Biology, College of Chemistry, Fuzhou University, Fuzhou, 350108, China.
College of Chemical Engineering, Huaqiao University, Xiamen, 361021, China.
Chemistry. 2021 Jul 26;27(42):10925-10931. doi: 10.1002/chem.202100731. Epub 2021 Jun 7.
The effects of defect states on the fluorescence (FL) and electrochemiluminescence (ECL) properties of graphite phase carbon nitride (g-CN) are systematically investigated for the first time. The g-CN nanosheets (CNNSs) obtained at different condensation temperatures are used as the study models. It can be found that all the CNNSs have two kinds of defect states, one is originated from the edge of CNNSs (labeled as CN-defect) and the other is attributed to the partially carbonization regions (labeled as C-defect). Both two kinds of defect states substantially affect the luminescent properties of CNNSs. Both the FL and ECL signals of CNNSs contain a band gap emission and two defect emissions. For the FL of CNNSs, decreasing the density of defect states can increase efficiently the FL quantum yield, while increasing the density of defect states can make the FL spectra red shift. For the ECL of CNNSs, increasing the density of CN-defect states and decreasing the density of C-defect states are greatly important to improve the ECL activity. This work provides a deep insight into the FL and ECL mechanisms of g-CN, and is of significance in tuning the FL and ECL properties of g-CN. Also, it will greatly promote the applications of CNNSs based on the FL and ECL properties.
首次系统研究了缺陷态对石墨相氮化碳(g-CN)荧光(FL)和电化学发光(ECL)性质的影响。将在不同缩合温度下获得的g-CN纳米片(CNNSs)用作研究模型。可以发现,所有的CNNSs都有两种缺陷态,一种源于CNNSs的边缘(标记为CN-缺陷),另一种归因于部分碳化区域(标记为C-缺陷)。这两种缺陷态都对CNNSs的发光性质有显著影响。CNNSs的FL和ECL信号都包含带隙发射和两种缺陷发射。对于CNNSs的FL,降低缺陷态密度可以有效提高FL量子产率,而增加缺陷态密度会使FL光谱红移。对于CNNSs的ECL,增加CN-缺陷态密度和降低C-缺陷态密度对提高ECL活性非常重要。这项工作深入洞察了g-CN的FL和ECL机制,对于调节g-CN的FL和ECL性质具有重要意义。此外,它将极大地促进基于FL和ECL性质的CNNSs的应用。