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垂直纳米线电极阵列通过细胞内电刺激增强人神经干细胞的神经发生。

Vertical Nanowire Electrode Array for Enhanced Neurogenesis of Human Neural Stem Cells via Intracellular Electrical Stimulation.

机构信息

Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Republic of Korea.

出版信息

Nano Lett. 2021 Jul 28;21(14):6343-6351. doi: 10.1021/acs.nanolett.0c04635. Epub 2021 May 17.

DOI:10.1021/acs.nanolett.0c04635
PMID:33998792
Abstract

Extracellular electrical stimulation (ES) can provide electrical potential from outside the cell membrane, but it is often ineffective due to interference from external factors such as culture medium resistance and membrane capacitance. To address this, we developed a vertical nanowire electrode array (VNEA) to directly provide intracellular electrical potential and current to cells through nanoelectrodes. Using this approach, the cell membrane resistivity and capacitance could be excluded, allowing effective ES. Human fetal neural stem cells (hfNSCs) were cultured on the VNEA for intracellular ES. Combining the structural properties of VNEA and VNEA-mediated ES, transient nanoscale perforation of the electrode was induced, promoting cell penetration and delivering current to the cell. Intracellular ES using VNEA improved the neuronal differentiation of hfNSCs more effectively than extracellular ES and facilitated electrophysiological functional maturation of hfNSCs because of the enhanced voltage-dependent ion-channel activity. The results demonstrate that VNEA with advanced nanoelectrodes serves as a highly effective culture and stimulation platform for stem-cell neurogenesis.

摘要

细胞外电刺激(ES)可以从细胞膜外部提供电势,但由于培养基电阻和膜电容等外部因素的干扰,通常效果不佳。为了解决这个问题,我们开发了一种垂直纳米线电极阵列(VNEA),通过纳米电极直接向细胞提供细胞内电势能和电流。通过这种方法,可以排除细胞膜电阻和电容,从而实现有效的 ES。将人胎神经干细胞(hfNSCs)培养在 VNEA 上进行细胞内 ES。结合 VNEA 的结构特性和 VNEA 介导的 ES,诱导电极的瞬时纳米级穿孔,促进细胞穿透并向细胞输送电流。与细胞外 ES 相比,使用 VNEA 的细胞内 ES 更有效地促进 hfNSCs 的神经元分化,并促进 hfNSCs 的电生理功能成熟,因为增强了电压依赖性离子通道活性。结果表明,具有先进纳米电极的 VNEA 是一种非常有效的干细胞神经发生培养和刺激平台。

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