Yoo Hyukjoon, Lee I Sak, Jung Sujin, Rho Sung Min, Kang Byung Ha, Kim Hyun Jae
School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea.
Adv Mater. 2021 Nov;33(47):e2006091. doi: 10.1002/adma.202006091. Epub 2021 May 28.
Metal oxide thin-film transistors have been continuously researched and mass-produced in the display industry. However, their phototransistors are still in their infancy. In particular, utilizing metal oxide semiconductors as phototransistors is difficult because of the limited light absorption wavelength range and persistent photocurrent (PPC) phenomenon. Numerous studies have attempted to improve the detectable light wavelength range and the PPC phenomenon. Here, recent studies on metal oxide phototransistors are reviewed, which have improved the range of light wavelengths and the PPC phenomenon by introducing an absorption layer of oxide or non-oxide hybrid structure. The materials of the absorption layer applied to absorb long-wavelength light are classified into oxides, chalcogenides, organic materials, perovskites, and nanodots. Finally, next-generation convergence studies combined with other research fields are introduced and future research directions are detailed.
金属氧化物薄膜晶体管在显示行业中一直受到持续研究并实现了大规模生产。然而，它们的光电晶体管仍处于起步阶段。特别是，由于光吸收波长范围有限和持续光电流（PPC）现象，利用金属氧化物半导体作为光电晶体管存在困难。许多研究试图改善可检测光波长范围和PPC现象。在此，对金属氧化物光电晶体管的近期研究进行综述，这些研究通过引入氧化物或非氧化物混合结构的吸收层改善了光波长范围和PPC现象。用于吸收长波长光的吸收层材料分为氧化物、硫族化物、有机材料、钙钛矿和纳米点。最后，介绍了与其他研究领域相结合的下一代融合研究，并详细阐述了未来的研究方向。
