Suppr超能文献

用于光电子应用的超越卤化铅钙钛矿的基于孤对ns阳离子的替代半导体。

Alternative Lone-Pair ns -Cation-Based Semiconductors beyond Lead Halide Perovskites for Optoelectronic Applications.

作者信息

Li Tianshu, Luo Shulin, Wang Xinjiang, Zhang Lijun

机构信息

State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, and School of Materials Science and Engineering, Jilin University, Changchun, 130012, China.

出版信息

Adv Mater. 2021 Aug;33(32):e2008574. doi: 10.1002/adma.202008574. Epub 2021 May 31.

Abstract

Lead halide perovskites have emerged in the last decade as advantageous high-performance optoelectronic semiconductors, and have undergone rapid development for diverse applications such as solar cells, light-emitting diodes , and photodetectors. While material instability and lead toxicity are still major concerns hindering their commercialization, they offer promising prospects and design principles for developing promising optoelectronic materials. The distinguished optoelectronic properties of lead halide perovskites stem from the Pb cation with a lone-pair 6s electronic configuration embedded in a mixed covalent-ionic bonding lattice. Herein, we summarize alternative Pb-free semiconductors containing lone-pair ns cations, intending to offer insights for developing potential optoelectronic materials other than lead halide perovskites. We start with the physical underpinning of how the ns cations within the material lattice allow for superior optoelectronic properties. We then review the emerging Pb-free semiconductors containing ns cations in terms of structural dimensionality, which is crucial for optoelectronic performance. For each category of materials, the research progresses on crystal structures, electronic/optical properties, device applications, and recent efforts for performance enhancements are overviewed. Finally, the issues hindering the further developments of studied materials are surveyed along with possible strategies to overcome them, which also provides an outlook on the future research in this field.

摘要

在过去十年中,卤化铅钙钛矿已成为具有优势的高性能光电子半导体,并在太阳能电池、发光二极管和光电探测器等多种应用中得到了快速发展。虽然材料不稳定性和铅毒性仍是阻碍其商业化的主要问题,但它们为开发有前景的光电子材料提供了有希望的前景和设计原则。卤化铅钙钛矿卓越的光电子特性源于嵌入混合共价-离子键晶格中的具有孤对6s电子构型的Pb阳离子。在此,我们总结了含有孤对ns阳离子的替代无铅半导体,旨在为开发除卤化铅钙钛矿之外的潜在光电子材料提供见解。我们从材料晶格中的ns阳离子如何实现卓越光电子特性的物理基础开始。然后,我们根据对光电子性能至关重要的结构维度,综述了新兴的含ns阳离子的无铅半导体。对于每一类材料,概述了其在晶体结构、电子/光学性质、器件应用以及近期性能提升方面的研究进展。最后,调查了阻碍所研究材料进一步发展的问题以及克服这些问题的可能策略,这也为该领域的未来研究提供了展望。

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验