Cherniak Gil, Avraham Moshe, Bar-Lev Sharon, Golan Gady, Nemirovsky Yael
Electrical Engineering Department, Technion-Israel Institute of Technology, Haifa 32000, Israel.
Department of Electrical Engineering and Electronics, Ariel University, Ariel 40700, Israel.
Micromachines (Basel). 2021 May 16;12(5):563. doi: 10.3390/mi12050563.
There is an ongoing effort to fabricate miniature, low-cost, and sensitive thermal sensors for domestic and industrial uses. This paper presents a miniature thermal sensor (dubbed TMOS) that is fabricated in advanced CMOS FABs, where the micromachined CMOS-SOI transistor, implemented with a 130-nm technology node, acts as a sensing element. This study puts emphasis on the study of electromagnetic absorption via the vacuum-packaged TMOS and how to optimize it. The regular CMOS transistor is transformed to a high-performance sensor by the micro- or nano-machining process that releases it from the silicon substrate by wafer-level processing and vacuum packaging. Since the TMOS is processed in a CMOS-SOI FAB and is comprised of multiple thin layers that follow strict FAB design rules, the absorbed electromagnetic radiation cannot be modeled accurately and a simulation tool is required. This paper presents modeling and simulations based on the LUMERICAL software package of the vacuum-packaged TMOS. A very high absorption coefficient may be achieved by understanding the physics, as well as the role of each layer.
目前正在努力制造用于家庭和工业用途的微型、低成本且灵敏的热传感器。本文介绍了一种在先进的CMOS制造工艺中制造的微型热传感器（称为TMOS），其中采用130纳米技术节点实现的微机械加工CMOS - SOI晶体管用作传感元件。本研究重点关注通过真空封装的TMOS对电磁吸收的研究以及如何对其进行优化。通过微加工或纳米加工工艺将常规CMOS晶体管从硅衬底上通过晶圆级加工和真空封装释放出来，从而将其转变为高性能传感器。由于TMOS是在CMOS - SOI制造工艺中加工的，并且由遵循严格制造设计规则的多个薄层组成，因此吸收的电磁辐射无法准确建模，需要一个仿真工具。本文介绍了基于真空封装TMOS的LUMERICAL软件包的建模和仿真。通过理解物理原理以及各层的作用，可以实现非常高的吸收系数。
