Alim Mohammad Abdul, Gaquiere Christophe, Crupi Giovanni
Department of Electrical and Electronic Engineering, University of Chittagong, Chittagong 4331, Bangladesh.
Institute of Electronic, Microelectronic and Nanotechnology (IEMN), The University of Lille, F-59000 Lille, France.
Micromachines (Basel). 2021 May 12;12(5):549. doi: 10.3390/mi12050549.
Presently, growing attention is being given to the analysis of the impact of the ambient temperature on the GaN HEMT performance. The present article is aimed at investigating both DC and microwave characteristics of a GaN-based HEMT versus the ambient temperature using measured data, an equivalent-circuit model, and a sensitivity-based analysis. The tested device is a 0.15-μm ultra-short gate-length AlGaN/GaN HEMT with a gate width of 200 μm. The interdigitated layout of this device is based on four fingers, each with a length of 50 μm. The scattering parameters are measured from 45 MHz to 50 GHz with the ambient temperature varied from -40 °C to 150 °C. A systematic study of the temperature-dependent performance is carried out by means of a sensitivity-based analysis. The achieved findings show that by the heating the transistor, the DC and microwave performance are degraded, due to the degradation in the electron transport properties.
目前，环境温度对氮化镓高电子迁移率晶体管（GaN HEMT）性能的影响分析正受到越来越多的关注。本文旨在利用测量数据、等效电路模型和基于灵敏度的分析方法，研究基于GaN的HEMT在不同环境温度下的直流和微波特性。测试器件是一款栅长为0.15μm的超短栅长AlGaN/GaN HEMT，栅宽为200μm。该器件的叉指式布局基于四个指状结构，每个指状结构的长度为50μm。散射参数在45MHz至50GHz范围内测量，环境温度在-40°C至150°C之间变化。通过基于灵敏度的分析方法对温度相关性能进行了系统研究。研究结果表明，加热晶体管会导致直流和微波性能下降，这是由于电子传输特性的退化所致。
