采用晶体管单元非对称功率合成的 Ku 波段 50 W 氮化镓高电子迁移率晶体管功率放大器。

Ku-Band 50 W GaN HEMT Power Amplifier Using Asymmetric Power Combining of Transistor Cells.

作者信息

Kim Seil, Lee Min-Pyo, Hong Sung-June, Kim Dong-Wook

机构信息

Department of Radio Science and Engineering, Chungnam National University, Daejeon 34134, Korea.

出版信息

Micromachines (Basel). 2018 Nov 24;9(12):619. doi: 10.3390/mi9120619.

DOI:10.3390/mi9120619

PMID:30477207

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6316699/

Abstract

In this paper, we present a Ku-band 50 W internally-matched power amplifier that asymmetrically combines the power transistor cells of the GaN high electron mobility transistor (HEMT) (CGHV1J070D) from Wolfspeed. The amplifier is designed using a large-signal transistor cell model in the foundry process, and asymmetric power combining, which consists of a slit pattern, oblique wire bonding and an asymmetric T-junction, is applied to obtain the amplitude/phase balance of the combined signals at the transistor cell combining position. Input and output matching circuits are implemented using a thin film process on a titanate substrate and an alumina substrate with the relative dielectric constants of 40 and 9.8, respectively. The pulsed measurement of a 330 μs pulse period and 6% duty cycle shows the maximum saturated output power of 57 to 66 W, drain efficiency of 40.3 to 46.7%, and power gain of 5.3 to 6.0 dB at power saturation from 16.2 to 16.8 GHz.

摘要

在本文中，我们展示了一款 Ku 波段 50 W 内部匹配功率放大器，它不对称地组合了 Wolfspeed 公司的氮化镓高电子迁移率晶体管（HEMT）（CGHV1J070D）的功率晶体管单元。该放大器在代工工艺中使用大信号晶体管单元模型进行设计，并采用了由缝隙图案、倾斜引线键合和不对称 T 型结组成的不对称功率合成技术，以在晶体管单元合成位置获得合成信号的幅度/相位平衡。输入和输出匹配电路分别在相对介电常数为 40 和 9.8 的钛酸盐衬底和氧化铝衬底上采用薄膜工艺实现。在 330 μs 脉冲周期和 6% 占空比的脉冲测量中，在 16.2 至 16.8 GHz 的功率饱和状态下，显示出最大饱和输出功率为 57 至 66 W，漏极效率为 40.3 至 46.7%，功率增益为 5.3 至 6.0 dB。