Vovk Andrii, Bunyaev Sergey A, Štrichovanec Pavel, Vovk Nikolay R, Postolnyi Bogdan, Apolinario Arlete, Pardo José Ángel, Algarabel Pedro Antonio, Kakazei Gleb N, Araujo João Pedro
Departamento de Física e Astronomia, Institute of Physics for Advanced Materials, Nanotechnology and Photonics (IFIMUP), Universidade do Porto, 4169-007 Porto, Portugal.
Instituto de Nanociencia y Materiales de Aragón, Campus Río Ebro, Universidad de Zaragoza-CSIC, 50018 Zaragoza, Spain.
Nanomaterials (Basel). 2021 May 7;11(5):1229. doi: 10.3390/nano11051229.
Thin polycrystalline CoFeGe films with composition close to stoichiometry have been fabricated using magnetron co-sputtering technique. Effects of substrate temperature (T) and post-deposition annealing (T) on structure, static and dynamic magnetic properties were systematically studied. It is shown that elevated T (T) promote formation of ordered L2 crystal structure. Variation of T (T) allow modification of magnetic properties in a broad range. Saturation magnetization ~920 emu/cm and low magnetization damping parameter α ~ 0.004 were achieved for T = 573 K. This in combination with soft ferromagnetic properties (coercivity below 6 Oe) makes the films attractive candidates for spin-transfer torque and magnonic devices.
采用磁控共溅射技术制备了成分接近化学计量比的薄多晶CoFeGe薄膜。系统研究了衬底温度（T）和沉积后退火（T）对结构、静态和动态磁性能的影响。结果表明，升高的T（T）促进了有序L2晶体结构的形成。T（T）的变化使得磁性能在很宽的范围内得到改变。当T = 573 K时，实现了920 emu/cm的饱和磁化强度和0.004的低磁化阻尼参数α。这与软铁磁性能（矫顽力低于6 Oe）相结合，使得这些薄膜成为自旋转移扭矩和磁子器件的有吸引力的候选材料。
