通过沉积温度和退火温度控制多晶CoFeGe薄膜的结构和磁性特性

Control of Structural and Magnetic Properties of Polycrystalline CoFeGe Films via Deposition and Annealing Temperatures.

作者信息

Vovk Andrii, Bunyaev Sergey A, Štrichovanec Pavel, Vovk Nikolay R, Postolnyi Bogdan, Apolinario Arlete, Pardo José Ángel, Algarabel Pedro Antonio, Kakazei Gleb N, Araujo João Pedro

机构信息

Departamento de Física e Astronomia, Institute of Physics for Advanced Materials, Nanotechnology and Photonics (IFIMUP), Universidade do Porto, 4169-007 Porto, Portugal.

Instituto de Nanociencia y Materiales de Aragón, Campus Río Ebro, Universidad de Zaragoza-CSIC, 50018 Zaragoza, Spain.

出版信息

Nanomaterials (Basel). 2021 May 7;11(5):1229. doi: 10.3390/nano11051229.

DOI:10.3390/nano11051229

PMID:34066968

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8148587/

Abstract

Thin polycrystalline CoFeGe films with composition close to stoichiometry have been fabricated using magnetron co-sputtering technique. Effects of substrate temperature (T) and post-deposition annealing (T) on structure, static and dynamic magnetic properties were systematically studied. It is shown that elevated T (T) promote formation of ordered L2 crystal structure. Variation of T (T) allow modification of magnetic properties in a broad range. Saturation magnetization ~920 emu/cm and low magnetization damping parameter α ~ 0.004 were achieved for T = 573 K. This in combination with soft ferromagnetic properties (coercivity below 6 Oe) makes the films attractive candidates for spin-transfer torque and magnonic devices.

摘要

采用磁控共溅射技术制备了成分接近化学计量比的薄多晶CoFeGe薄膜。系统研究了衬底温度（T）和沉积后退火（T）对结构、静态和动态磁性能的影响。结果表明，升高的T（T）促进了有序L2晶体结构的形成。T（T）的变化使得磁性能在很宽的范围内得到改变。当T = 573 K时，实现了~~920 emu/cm的饱和磁化强度和~~0.004的低磁化阻尼参数α。这与软铁磁性能（矫顽力低于6 Oe）相结合，使得这些薄膜成为自旋转移扭矩和磁子器件的有吸引力的候选材料。